Applied Physics A

, Volume 116, Issue 1, pp 251–257 | Cite as

Self detachment of free-standing porous silicon membranes in moderately doped n-type silicon

  • Neeraj Kumar
  • Salvatore Gennaro
  • Pradeep Vallachira Warriam Sasikumar
  • Gian Domenico Sorarù
  • Paolo Bettotti
Article

Abstract

In this article we describe a reliable etching method to fabricate porous silicon free-standing membranes (FSMs) based on a self detachment of the porous layer in moderately doped n-type silicon substrates. We found that stable growth of smooth and straight pores is restricted to a narrow range of etching conditions and, unlike p-type substrates, the lift-off of the membrane is a self-limited process that does not require a large burst of current. The detachment of the porous membrane is independent of the structure of the already porosified layer, meaning that the average pore diameter can be tuned from nano to macro size within the same membrane. We also demonstrate that, despite their limited thickness, FSMs are quite robust and can sustained further processing. Thus, the etching receipt we are proposing here extends the range of sensors and filters that can be fabricated using porous silicon technology.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Neeraj Kumar
    • 1
  • Salvatore Gennaro
    • 2
  • Pradeep Vallachira Warriam Sasikumar
    • 3
  • Gian Domenico Sorarù
    • 3
  • Paolo Bettotti
    • 1
  1. 1.Nanoscience Laboratory, Department of PhysicsUniversity of TrentoPovoItaly
  2. 2.MinaLabFBKPovoItaly
  3. 3.Department of Materials Engineering and Industrial TechnologyUniversity of TrentoTrentoItaly

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