Applied Physics A

, Volume 115, Issue 1, pp 127–133 | Cite as

Bulk crystal SiC blue LED with p–n homojunction structure fabricated by dressed-photon-phonon–assisted annealing

Invited paper
First Online:
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Accepted:

Abstract

To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %.

Keywords

Pulse Current External Quantum Efficiency Internal Quantum Efficiency Dopant Density Forward Bias Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgements

The authors thank A. Mizushima and K. Matsue for their assistance in conducting the experiments. A part of this study has been supported by “Development of Next-generation High-performance Technology for Photovoltaic Power Generation System Project” of The New Energy and Industrial Technology Development Organization (NEDO) since 2012.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  1. 1.Department of Electrical Engineering and Information Systems, Graduate School of EngineeringThe University of TokyoBunkyo-ku, TokyoJapan
  2. 2.Nanophotonics Research Center, Graduate School of EngineeringThe University of TokyoTokyoJapan

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