Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer
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The blue InGaN light-emitting diodes (LEDs), employing a lattice-compensated p-AlGaN/InGaN superlattice (SL) interlayer to link the last quantum barrier and electron blocking layer (EBL), are proposed and investigated numerically. The simulation results indicate that the newly designed LEDs have better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region over the conventional LEDs mainly attributed to the mitigated polarization-induced downward band bending. Furthermore, the markedly improved output power and efficiency droop are also suggested when the conventional LEDs corresponding to experiment data are replaced by the newly designed LEDs.
KeywordsOriginal Structure Internal Quantum Efficiency Electron Leakage Spontaneous Emission Rate Electron Block Layer
This work was supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong (Grant No. 2012A080304016), and the first phase of construction of Guangdong Research Institute of Semiconductor Lighting Industrial Technology (Project No. 2010A081001001).
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