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Applied Physics A

, Volume 111, Issue 3, pp 719–724 | Cite as

Non-volatile memory effect of a high-density NiSi nano-dots floating gate memory using single triangular-shaped Si nanowire channel

  • Jingjian Ren
  • Dong Yan
  • Sheng Chu
  • Jianlin LiuEmail author
Rapid communication

Abstract

A back-gated nonplanar floating gate device based on buried single triangular-shaped Si nanowire channel (width ∼40 nm) and embedded high-density uniform NiSi nano-dots (∼1.5×1012 cm−2) is demonstrated. Memory properties including memory window, programming/erasing, and retention are evaluated. The transfer and transient characteristics show clear charge injection, storage and removal effects and the associated programming/erasing mechanism based on fringing electric field is studied. Robust room and high temperature retention performance is observed.

Keywords

Technology Node Threshold Voltage Shift Back Gate Floating Gate Bury Oxide Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This material is based on research sponsored by DARPA/Defense Microelectronics Activity (DMEA) under agreement number H94003-10-2-1003 and the National Science Foundation (NSF) DMR-0807232.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Jingjian Ren
    • 1
  • Dong Yan
    • 2
  • Sheng Chu
    • 1
  • Jianlin Liu
    • 1
    Email author
  1. 1.Quantum Structures Laboratory, Department of Electrical EngineeringUniversity of CaliforniaRiversideUSA
  2. 2.Center for Nanoscale Science and EngineeringUniversity of CaliforniaRiversideUSA

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