Applied Physics A

, Volume 114, Issue 2, pp 625–629 | Cite as

Effect of laser annealing using high repetition rate pulsed laser on optical properties of phosphorus-ion-implanted ZnO nanorods

  • Tetsuya Shimogaki
  • Taihei Ofuji
  • Norihiro Tetsuyama
  • Kota Okazaki
  • Mitsuhiro Higashihata
  • Daisuke Nakamura
  • Hiroshi Ikenoue
  • Tanemasa Asano
  • Tatsuo Okada


The effect of high repetition rate pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus-ion-implanted zinc oxide nanorods has been investigated. The recovery levels of phosphorus-ion-implanted zinc oxide nanorods have been measured by photoluminescence spectra and cathode luminescence images. Cathode luminescence disappeared over 300 nm below the surface due to the damage caused by ion implantation with an acceleration voltage of 25 kV. When the annealing was performed at a low repetition rate of the KrF excimer laser, cathode luminescence was recovered only in a shallow area below the surface. The depth of the annealed area was increased along with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded in annealing the whole damaged area of over 300 nm in depth and in observing cathode luminescence. Thus, the effectiveness of high repetition rate pulsed laser annealing on phosphorus-ion-implanted zinc oxide nanorods was demonstrated.


High Repetition Rate Laser Annealing Cathode Luminescence Zinc Oxide Nanorods Cathode Luminescence Image 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors would like to thank Mr. Takayuki Takao and Mr. Yosuke Watanabe of the Department of Gigaphoton Next GLP for their support in the experiment. This work was supported in part by the Program under Special Coordination Funds for Promoting Science and Technology from the Japan Science and Technology Agency (JST) and a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (JSPS, No. 24656053).


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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Tetsuya Shimogaki
    • 1
  • Taihei Ofuji
    • 1
  • Norihiro Tetsuyama
    • 1
  • Kota Okazaki
    • 1
  • Mitsuhiro Higashihata
    • 1
  • Daisuke Nakamura
    • 1
  • Hiroshi Ikenoue
    • 1
  • Tanemasa Asano
    • 1
  • Tatsuo Okada
    • 1
  1. 1.Department of Information Science and Electrical EngineeringKyushu UniversityFukuokaJapan

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