Applied Physics A

, Volume 111, Issue 4, pp 1045–1049 | Cite as

Resistive switching in a negative temperature coefficient metal oxide memristive one-port

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Abstract

A current-controlled memristive one-port was constructed from cobalt monoxide (CoO) using a traditional solid reaction method at 1150 °C in argon atmosphere. Hysteretic current–voltage (I–V) characteristics and resistance switching were investigated in the as-obtained Ag/CoO/Ag cell. Dependences of the I–V loop on voltage range (0 to 10, 11, and 12 V), voltage scan rate (0.1, 1, and 10 V/s), and temperature (323, 373, and 423 K) were reported. A thermistor model for materials with negative temperature coefficient (NTC) was proposed for explanation of the mechanism. An ideal NTC thermistor-based memristive one-port would broaden the applications of memristors and memristive devices.

Keywords

Resistance Switching Negative Temperature Coefficient Heat Accumulation Loop Area Hysteretic Loop 
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Notes

Acknowledgement

This work was supported by the National Natural Science Foundation (51032003, 61077029 and 11274198) and National High Technology Research and Development Program of China (863 Program) (2012AA030703).

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Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Kunpeng Cai
    • 1
    • 2
  • Zhaoyu He
    • 1
  • Jingbo Sun
    • 1
    • 3
  • Bo Li
    • 2
  • Ji Zhou
    • 1
  1. 1.State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and EngineeringTsinghua UniversityBeijingChina
  2. 2.Advanced Materials Institute, Shenzhen Graduate SchoolTsinghua UniversityShenzhenChina
  3. 3.Department of Electrical EngineeringUniversity at Buffalo, The State University of New YorkBuffaloUSA

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