Theoretical simulation of photovoltaic response of graphene-on-semiconductors
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- Behura, S.K., Mahala, P., Ray, A. et al. Appl. Phys. A (2013) 111: 1159. doi:10.1007/s00339-012-7335-2
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Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (VOC) and short-circuit current density (JSC) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the VOC of both systems are investigated. The VOC for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the VOC for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The JSC for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm−2 and 4.78 mAcm−2, respectively, whereas the JSC for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm−2 and 6.68 mAcm−2, respectively. These results are in good agreement with the reported experimental work.