Theoretical simulation of photovoltaic response of graphene-on-semiconductors
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Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (V OC) and short-circuit current density (J SC) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the V OC of both systems are investigated. The V OC for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the V OC for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The J SC for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm−2 and 4.78 mAcm−2, respectively, whereas the J SC for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm−2 and 6.68 mAcm−2, respectively. These results are in good agreement with the reported experimental work.
KeywordsBarrier Height Doping Density Surface Recombination Velocity Schottky Junction Highly Order Pyrolytic Graphite
The authors acknowledge the facilities provided by Gujarat Energy Research and Management Institute (GERMI) and Pandit Deendayal Petroleum University (PDPU) to complete the work.
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