Electron-beam deposition of vanadium dioxide thin films
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Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass.
KeywordsAnnealing Time Diffuse Scattering Powder Precursor Optical Performance Vanadium Dioxide
K.A. was supported by a research assistantship provided by the Defense Threat Reduction Agency (HDTRA1-10-1-0016). R.E.M. was supported by the Office of Science, U.S. Department of Energy (DE-FG02-01ER45916). Portions of this work were performed at the Vanderbilt Institute of Nanoscale Science and Engineering, using facilities renovated under NSF ARI-R2 DMR-0963361. We thank Professors Jim Wittig and Charles Lukehart for their helpful discussions related to the analysis of this work.
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