Magneto-electronic properties and spin-resolved I–V curves of a Co/GeSe heterojunction diode: an ab initio study
We present ab initio calculations of magnetoelectronic and transport properties of the interface of hcp Cobalt (001) and the intrinsic narrow-gap semiconductor germanium selenide (GeSe). Using a norm-conserving pseudopotentials scheme within DFT, we first model the interface with a supercell approach and focus on the spin-resolved densities of states and the magnetic moment (spin and orbital components) at the different atomic layers that form the device. We also report a series of cuts (perpendicular to the plane of the heterojunction) of the electronic and spin densities showing a slight magnetization of the first layers of the semiconductor. Finally, we model the device with a different scheme: using semiinfinite electrodes connected to the heterojunction. These latter calculations are based upon a nonequilibrium Green’s function approach that allows us to explore the spin-resolved electronic transport under a bias voltage (spin-resolved I–V curves), revealing features of potential applicability in spintronics.
KeywordsGeSe PAOs Magnetic Tunnel Junction Heterojunction Diode Current Spin Polarization
- 9.J.A.C. Bland, B. Heinrich (eds.), Ultrathin Magnetic Structures IV (Springer, Berlin, 2003) Google Scholar