Applied Physics A

, Volume 108, Issue 3, pp 509–513 | Cite as

Synthesis of silica nanowires by PECVD at low temperature using Zn as a catalyst

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Abstract

Amorphous silica nanowires (NWs) were simply synthesized by annealing Zn film in silicon (Si) and oxygen (O) chemical vapors produced by plasma-enhanced chemical vapor deposition (PECVD) technique with a mixture of SiH4 and N2O gases. The resulting silica NWs were shown to have a silicon-rich oxide (SiO x ) phase in which the oxygen composition (x value) of the SiO x is controlled by varying the mixing ratio of two gases. It was found that well-defined silica (SiO1.34) NWs having a mean diameter of ∼250 nm were formed by annealing Zn film (∼300 nm) at 380 °C for 10 min in Si and O vapors produced using a mixture of SiH4 and N2O achieved with flow rates of 200 sccm and 60 sccm, respectively. They emit light with a peak centered at 550 nm, characteristic of SiO x materials. It is suggested that the NWs are grown via Zn/ZnO-catalyzed vapor–solid process.

Keywords

SiH4 Light Emission Property Silica Nanowires Amorphous Silica Nanowires 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgement

This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant Number: 2010-0021320).

References

  1. 1.
    M. Law, L.E. Greene, J.C. Johnson, R. Saykally, P. Yang, Nat. Mater. 4, 455 (2005) ADSCrossRefGoogle Scholar
  2. 2.
    M.C. Putnam, S.W. Boettcher, M.D. Kelzenberg, D.B. Turner-Evans, J.M. Spurgeon, E.L. Warren, R.M. Briggs, N.S. Lewis, H.A. Atwater, Energy Environ. Sci. 3, 1037 (2010) CrossRefGoogle Scholar
  3. 3.
    D.P. Yu, Q.L. Hang, Y. Ding, H.Z. Zhang, Z.G. Bai, J.J. Wang, Y.H. Zou, W. Qian, G.C. Xiong, S.Q. Feng, Appl. Phys. Lett. 73, 3076 (1998) ADSCrossRefGoogle Scholar
  4. 4.
    L. Tong, R.R. Gattass, B. Jonathan, J.B. Ashcom, S. He, J. Lou, M. Shen, I. Maxwell, E. Mazur, Nature 426, 816 (2003) ADSCrossRefGoogle Scholar
  5. 5.
    F. Patolsky, G. Zheng, C.M. Lieber, Nanomedicine 1, 51 (2006) CrossRefGoogle Scholar
  6. 6.
    K.-H. Lee, H.S. Yang, K.H. Baik, J. Bang, R.R. Vanfleet, W. Sigmund, Chem. Phys. Lett. 383, 380 (2004) ADSCrossRefGoogle Scholar
  7. 7.
    Z. Pan, S. Dai, D.B. Beach, D.H. Lowndes, Nano Lett. 3, 1279 (2003) ADSCrossRefGoogle Scholar
  8. 8.
    Z.L. Wang, Adv. Mater. 15, 432 (2003) CrossRefGoogle Scholar
  9. 9.
    T.H. Kim, A. Shalav, R.G. Elliman, J. Appl. Phys. 108, 076102 (2010) ADSCrossRefGoogle Scholar
  10. 10.
    R.S. Wagner, W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964) ADSCrossRefGoogle Scholar
  11. 11.
    A.A. Istratova, P. Zhang, R.J. McDonald, A.R. Smith, M. Seacrist, R. Wahlich, E.R. Weber, J. Appl. Phys. 97, 023505 (2005) ADSCrossRefGoogle Scholar
  12. 12.
    L. Vaccaro, M. Cannas, V. Radzig, R. Boscaino, Phys. Rev. B 78, 075421 (2008) ADSCrossRefGoogle Scholar
  13. 13.
    J.Q. Hu, Y. Bando, J.H. Zhan, Y.B. Li, T. Sekiguchi, Appl. Phys. Lett. 83, 4414 (2003) ADSCrossRefGoogle Scholar
  14. 14.
    Z.W. Pan, Z.R. Dai, Z.L. Wang, Science 291, 1947 (2001) ADSCrossRefGoogle Scholar
  15. 15.
    J.Q. Hu, Y. Bando, Appl. Phys. Lett. 82, 1401 (2003) ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  1. 1.Department of PhysicsKangwon National UniversityChuncheonKorea

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