Applied Physics A

, Volume 107, Issue 2, pp 255–260 | Cite as

Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector

  • Xianghui Zhang
  • Xiangyun Han
  • Jun Su
  • Qi Zhang
  • Yihua Gao
Rapid Communication

Abstract

Well-crystallized ZnO nanowire arrays were grown on GaN/sapphire by one-step chemical vapor deposition under control of the fabrication pressure of 1000–2500 Pa and the best-aligned arrays were obtained at 1000 Pa. A photoluminescence study shows a red shift with nanowire diameter increase. Under 365-nm UV irradiation of 0.3 mW/cm2, the photoresponse study of the best ZnO arrays shows an ultra-fast tri-exponential rise with three constants of 0.148, 0.064 and 0.613 s, and a bi-exponential decay behavior with two recovery constants of 30 and 270 ms. The ZnO/GaN heterojunction barriers could be responsible for the ultra-fast tri-exponential rise and bi-exponential decay behavior.

Notes

Acknowledgement

This work is supported by NNSF of China (No. 11074082) and NCET (080230).

References

  1. 1.
    X.H. Zhang, L. Gong, K. Liu, Y.Z. Cao, X. Xiao, W.M. Sun, X.J. Hu, Y.H. Gao, J.A. Chen, J. Zhou, Z.L. Wang, Adv. Mater. 22(46), 5292 (2010) CrossRefGoogle Scholar
  2. 2.
    Y.H. Gao, Y. Bando, Nature 415, 599 (2002) CrossRefGoogle Scholar
  3. 3.
    X.F. Duan, Y. Huang, R. Agarwal, C.M. Lieber, Nature 421, 241 (2003) ADSCrossRefGoogle Scholar
  4. 4.
    M.H. Huang, S. Mao, H. Feick, H.Q. Yan, Y.Y. Wu, H. Kind, E. Weber, R. Russo, P.D. Yang, Science 292, 1897 (2001) ADSCrossRefGoogle Scholar
  5. 5.
    S. Jha, J.C. Qian, O. Kutsay, J. Kovac, C.Y. Luan, J.A. Zapien, W.J. Zhang, S.T. Lee, I. Bello, Nanotechnology 22, 245202 (2011) ADSCrossRefGoogle Scholar
  6. 6.
    A.B. Martinson, J.W. Elam, J.T. Hupp, M.J. Pellin, Nano Lett. 7, 2183 (2007) ADSCrossRefGoogle Scholar
  7. 7.
    C.S. Lao, J. Liu, P.X. Gao, L.Y. Zhang, D. Davidovic, R. Tummala, Z.L. Wang, Nano Lett. 6, 263 (2006) ADSCrossRefGoogle Scholar
  8. 8.
    G.D. Yuan, W.J. Zhang, J.S. Jie, X. Fan, J.X. Tang, I. Shafiq, Z.Z. Ye, C.S. Lee, S.T. Lee, Adv. Mater. 20, 168 (2008) CrossRefGoogle Scholar
  9. 9.
    G. Cheng, X. Wu, B. Liu, B. Li, X. Zhang, Z. Du, Appl. Phys. Lett. 99, 203105 (2011) ADSCrossRefGoogle Scholar
  10. 10.
    J. Bao, I. Shalish, Z. Su, R. Gurwitz, F. Capasso, X. Wang, Z. Ren, Nanoscale Res. Lett. 6, 404 (2011) ADSCrossRefGoogle Scholar
  11. 11.
    J. Zhou, Y.D. Gu, Y.F. Hu, W.J. Mai, P.H. Yeh, G. Bao, A.K. Sood, D.L. Polla, Z.L. Wang, Appl. Phys. Lett. 94, 191103 (2009) ADSCrossRefGoogle Scholar
  12. 12.
    K. Kwak, K. Cho, S. Kim, Nanotechnology 22, 415204 (2011) CrossRefGoogle Scholar
  13. 13.
    B.O. Jung, D.C. Kim, B.H. Kong, D.W. Kim, H.K. Cho, Sens. Actuators B, Chem. 160, 740 (2011) CrossRefGoogle Scholar
  14. 14.
    Q.H. Li, T. Gao, Y.G. Wang, T.H. Wang, Appl. Phys. Lett. 86, 123117 (2005) ADSCrossRefGoogle Scholar
  15. 15.
    S. Bai, W. Wu, Y. Qin, N. Cui, D.J. Bayerl, X. Wang, Adv. Funct. Mater. 21, 4464 (2011) CrossRefGoogle Scholar
  16. 16.
    Y. Li, F. Della Valle, M. Simonnet, I. Yamada, J.J. Delaunay, Appl. Phys. Lett. 94, 023110 (2009) ADSCrossRefGoogle Scholar
  17. 17.
    A. Bera, D. Basak, Appl. Phys. Lett. 94, 163119 (2009) ADSCrossRefGoogle Scholar
  18. 18.
    Y. Wang, Z. Liao, G. She, L. Mu, D. Chen, W. Shi, Appl. Phys. Lett. 98, 203108 (2011) ADSCrossRefGoogle Scholar
  19. 19.
    R.F. Zhuo, H.T. Feng, J.T. Chen, D. Yan, J.J. Feng, H.J. Li, B.S. Geng, S. Cheng, X.Y. Xu, P.X. Yan, J. Phys. Chem. C 112, 11767 (2008) CrossRefGoogle Scholar
  20. 20.
    X.D. Wang, J.H. Song, C.J. Summers, J.H. Ryou, P. Li, R.D. Dupuis, Z.L. Wang, J. Phys. Chem. B 110, 7720 (2006) CrossRefGoogle Scholar
  21. 21.
    H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, W. Cai, Adv. Funct. Mater. 20, 561 (2010) CrossRefGoogle Scholar
  22. 22.
    R. Cuscó, E. Alarcón-Lladó, J. Ibáñez, L. Artús, J. Jiménez, B. Wang, M.J. Callahan, Phys. Rev. B 75, 165202 (2007) ADSCrossRefGoogle Scholar
  23. 23.
    S. Dhara, P. Giri, Nanoscale Res. Lett. 6, 504 (2011) ADSCrossRefGoogle Scholar
  24. 24.
    S. Mridha, D. Basak, Appl. Phys. Lett. 92, 142111 (2008) ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  • Xianghui Zhang
    • 1
  • Xiangyun Han
    • 1
    • 2
  • Jun Su
    • 1
  • Qi Zhang
    • 1
  • Yihua Gao
    • 1
  1. 1.Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science & EngineeringHuazhong University of Science and TechnologyWuhanPeople’s Republic of China
  2. 2.Chongqing Police CollegeChongqingPeople’s Republic of China

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