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Applied Physics A

, Volume 107, Issue 4, pp 789–794 | Cite as

Thermoelectric properties of porous silicon

  • J. de Boor
  • D. S. Kim
  • X. Ao
  • M. Becker
  • N. F. Hinsche
  • I. Mertig
  • P. Zahn
  • V. Schmidt
Rapid communication

Abstract

We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.

Keywords

Porous Silicon Thermoelectric Property Thermoelectric Material Charge Carrier Concentration Thermoelectric Figure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

We would like to acknowledge the help of D. Pantel with the Hall measurements, the help of K. Sklarek with sample preparation, and financial support from BMBF Project PoSiTeM (03X3539A).

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Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  • J. de Boor
    • 1
  • D. S. Kim
    • 1
  • X. Ao
    • 1
  • M. Becker
    • 1
  • N. F. Hinsche
    • 2
  • I. Mertig
    • 1
    • 2
  • P. Zahn
    • 2
  • V. Schmidt
    • 1
  1. 1.Max Planck Institute of Microstructure PhysicsHalleGermany
  2. 2.Institut für PhysikMartin-Luther-Universität Halle-WittenbergHalleGermany

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