Thermoelectric properties of porous silicon
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We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.
KeywordsPorous Silicon Thermoelectric Property Thermoelectric Material Charge Carrier Concentration Thermoelectric Figure
We would like to acknowledge the help of D. Pantel with the Hall measurements, the help of K. Sklarek with sample preparation, and financial support from BMBF Project PoSiTeM (03X3539A).
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