Applied Physics A

, Volume 107, Issue 2, pp 371–377 | Cite as

Spectroscopic analysis of packaging concepts for high-power diode laser bars

  • Martin Hempel
  • Mathias Ziegler
  • Sandy Schwirzke-Schaaf
  • Jens W. Tomm
  • Denny Jankowski
  • Dominic Schröder
Article

Abstract

Double-side cooled high-power diode laser bars packaged by different techniques on different types of passive heat sinks are analyzed in terms of packaging-induced strain. Reference data from standard devices being single-side cooled only and packaged by conventional soft and hard soldering are also presented. Thermal profiling across the devices complements the results. The most suitable packaging architecture and technique for double-side cooled bars is identified. Measurements of the laser emission near field and electroluminescence pattern provide direct reference to the functionality of the devices. Furthermore, a type of cross calibration of the methods used for strain analysis is made, since all techniques are applied to the same set of bars. This involves micro photoluminescence, micro Raman, and degree-of-polarization electroluminescence spectroscopy.

Notes

Acknowledgements

Technical assistance of Monika Tischer and Michael Winterfeld is acknowledged.

References

  1. 1.
    A. Knigge, G. Erbert, J. Jonsson, W. Pittroff, R. Staske, B. Sumpf, M. Weyers, G. Trankle, Electron. Lett. 41, 250 (2005) CrossRefGoogle Scholar
  2. 2.
    H.X. Li, T. Towe, I. Chyr, D. Brown, T. Nguyen, F. Reinhardt, X. Jin, R. Srinivasan, M. Berube, T. Truchan, R. Bullock, J. Harrison, IEEE Photonics Technol. Lett. 19, 960 (2007) ADSCrossRefGoogle Scholar
  3. 3.
    D. Schröder, J. Meusel, P. Hennig, D. Lorenzen, M. Schröder, R. Hülsewede, J. Sebastian, Proc. SPIE 6456, 64560N (2007) CrossRefGoogle Scholar
  4. 4.
    J.W. Tomm, A. Gerhardt, R. Muller, V. Malyarchuk, Y. Sainte-Marie, P. Galtier, J. Nagle, J.-P. Landesman, J. Appl. Phys. 93, 1354 (2003) ADSCrossRefGoogle Scholar
  5. 5.
    J.W. Tomm, A. Gerhardt, R. Muller, M.L. Biermann, J.P. Holland, D. Lorenzen, E. Kaulfersch, Appl. Phys. Lett. 82, 4193 (2003) ADSCrossRefGoogle Scholar
  6. 6.
    E. Martin, J.P. Landesman, J.P. Hirtz, A. Fily, Appl. Phys. Lett. 75, 2521 (1999) ADSCrossRefGoogle Scholar
  7. 7.
    D. Schröder, M. Schröder, E. Werner, J. Meusel, D. Lorenzen, P. Hennig, R. Hülsewede, J. Sebastian, Proc. SPIE 7198, 719809 (2009) CrossRefGoogle Scholar
  8. 8.
    J.W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, A. Gerhardt, J. Donecker, D. Lorenzen, F.X. Daiminger, S. Weiss, M. Hutter, E. Kaulfersch, H. Reichl, J. Appl. Phys. 86, 1196 (1999) ADSCrossRefGoogle Scholar
  9. 9.
    J.W. Tomm, T.Q. Tien, D.T. Cassidy, Appl. Phys. Lett. 88, 133504 (2006) ADSCrossRefGoogle Scholar
  10. 10.
    M. Schröder, D. Schröder, P. Hennig, DE patent 10 2009 040 835 A1, 3 October (2011) Google Scholar
  11. 11.
    J.W. Tomm, J. Jimenez (eds.), Quantum-Well Laser Array Packaging (McGraw-Hill, New York, 2007) Google Scholar
  12. 12.
    R. Ossikovski, Q. Nguyen, G. Picardi, J. Schreiber, J. Appl. Phys. 103, 093525 (2008) ADSCrossRefGoogle Scholar
  13. 13.
    J.W. Tomm, T.Q. Tien, M. Oudart, J. Nagle, M.L. Biermann, Mater. Sci. Semicond. Process. 9, 215 (2006) CrossRefGoogle Scholar
  14. 14.
    M. Ziegler, F. Weik, J.W. Tomm, T. Elsaesser, W. Nakwaski, R.P. Sarzala, D. Lorenzen, J. Meusel, A. Kozlowska, Appl. Phys. Lett. 89, 263506 (2006) ADSCrossRefGoogle Scholar
  15. 15.
    J. LeClech, M. Ziegler, J. Mukherjee, J.W. Tomm, T. Elsaesser, J.-P. Landesman, B. Corbett, J.G. Mclnerney, J.P. Reithmaier, S. Deubert, A. Forchel, W. Nakwaski, R.P. Sarzala, J. Appl. Phys. 105, 014502 (2009) ADSCrossRefGoogle Scholar
  16. 16.
    M. Ziegler, J.W. Tomm, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, J. Biesenbach, J. Appl. Phys. 103, 104508 (2008) ADSCrossRefGoogle Scholar
  17. 17.
    A. Kozlowska, P. Wawrzyniak, J.W. Tomm, F. Weik, T. Elsaesser, Appl. Phys. Lett. 87, 153503 (2005) ADSCrossRefGoogle Scholar
  18. 18.
    R. Puchert, A. Bärwolff, M. Voss, U. Menzel, J.W. Tomm, J. Luft, IEEE Trans. Compon. Packag. Technol. 23, 95 (2000) CrossRefGoogle Scholar
  19. 19.
    J.W. Tomm, M. Ziegler, T.Q. Tien, F. Weik, P. Hennig, J. Meusel, H. Kissel, G. Seibold, J. Biesenbach, G. Groenninger, G. Herrmann, U. Strauss, Proc. SPIE 6876, 687619-1 (2008) Google Scholar

Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  • Martin Hempel
    • 1
  • Mathias Ziegler
    • 2
  • Sandy Schwirzke-Schaaf
    • 1
  • Jens W. Tomm
    • 1
  • Denny Jankowski
    • 3
  • Dominic Schröder
    • 3
  1. 1.Max-Born-InstitutBerlinGermany
  2. 2.Fachgruppe VIII.4Bundesanstalt für Materialforschung und -prüfungBerlinGermany
  3. 3.JENOPTIK Laser GmbHJenaGermany

Personalised recommendations