Applied Physics A

, Volume 105, Issue 1, pp 89–94 | Cite as

Surface roughness assisted 100 kHz femtosecond laser induced nanostructure formation on silicon surface

  • Takuro Tomita
  • Ryota Kumai
  • Hidenori Nomura
  • Shigeki Matsuo
  • Shuichi Hashimoto
  • Ken Morita
  • Toshiro Isu
Article

Abstract

Spontaneous nanostructure formations on roughened and smooth silicon surface by the femtosecond laser irradiation with the repetition rate of 100 kHz were systematically studied. In addition to the widely accepted so-called coarse ripple, which has the period analogous to the wavelength of the laser beam and aligns perpendicularly to the electric field of the incident laser beam, the ripple which has the period similar to the wavelength of the incident laser beam but aligns parallel to the electric field of the laser beam was observed on the roughened surface for the lower fluence and the higher number of pulse irradiation. Furthermore, the ensemble of dots formed by the enhancement of the local electric field was found on the roughened surface. This structure is preferentially formed around the scratches aligned perpendicularly to the electric field of the laser beam. These novel nanostructures are considered to be peculiar to the femtosecond laser irradiation and open the possibilities for precise control of the spontaneous nanostructure formation by femtosecond laser irradiation.

Keywords

Laser Beam Laser Irradiation Femtosecond Laser Silicon Surface Femtosecond Laser Pulse 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. Birnbaum, J. Appl. Phys. 36, 3688 (1965) MathSciNetADSCrossRefGoogle Scholar
  2. 2.
    J.E. Sipe, J.F. Young, J.S. Preston, H.M. Driel, Phys. Rev. B 27, 1141 (1983) ADSCrossRefGoogle Scholar
  3. 3.
    J.F. Young, J.S. Preston, H.M. Driel, J.E. Sipe, Phys. Rev. B 27, 1155 (1983) ADSCrossRefGoogle Scholar
  4. 4.
    J.F. Young, J.E. Sipe, H.M. Driel, Phys. Rev. B 30, 2001 (1984) ADSCrossRefGoogle Scholar
  5. 5.
    A.M. Ozkan, A.P. Malshe, T.A. Railkar, W.D. Brown, M.D. Shirk, P.A. Molian, Appl. Phys. Lett. 75, 3716 (1999) ADSCrossRefGoogle Scholar
  6. 6.
    A. Borowiec, H.K. Haugen, Appl. Phys. Lett. 82, 4462 (2003) ADSCrossRefGoogle Scholar
  7. 7.
    W. Kautek, P. Rudolph, G. Daminelli, J. Krüger, Appl. Phys. A 81, 65 (2005) ADSCrossRefGoogle Scholar
  8. 8.
    T.H.R. Crawford, H.K. Haugen, Appl. Surf. Sci. 253, 4970 (2007) ADSCrossRefGoogle Scholar
  9. 9.
    G. Daminelli, J. Krüger, W. Kautek, Thin Solid Films 467, 334 (2004) ADSCrossRefGoogle Scholar
  10. 10.
    R.L. Harzic, H. Schuck, D. Sauer, T. Anhut, I. Riemann, K. König, Opt. Express 13, 6651 (2005) ADSCrossRefGoogle Scholar
  11. 11.
    T. Tomita, K. Kinoshita, S. Matsuo, S. Hashimoto, Appl. Phys. Lett. 90, 153115 (2007) ADSCrossRefGoogle Scholar
  12. 12.
    J.M. Liu, Opt. Lett. 7, 196 (1982) ADSCrossRefGoogle Scholar
  13. 13.
    J. Bonse, S. Baudach, J. Krüger, W. Kautek, M. Lenzner, Appl. Phys. A 74, 19 (2002) ADSCrossRefGoogle Scholar
  14. 14.
    N. Yasumaru, K. Miyazaki, J. Kiuchi, Appl. Phys. A 81, 933 (2005) ADSCrossRefGoogle Scholar
  15. 15.
    J. Reif, O. Varlamova, F. Costache, Appl. Phys. A, Mater. Sci. Process. 92, 1019 (2008) ADSCrossRefGoogle Scholar
  16. 16.
    T. Tomita, K. Kinoshita, S. Matsuo, S. Hashimoto, Jpn. J. Appl. Phys. 45, L444 (2006) ADSCrossRefGoogle Scholar
  17. 17.
    D. Ashkenasi, A. Rosenfeld, H. Varel, M. Wähmer, E.E.B. Campbell, Appl. Surf. Sci. 120, 65 (1997) ADSCrossRefGoogle Scholar
  18. 18.
    Z. Guosheng, P.M. Fauchet, A.E. Siegman, Phys. Rev. B 26, 5355 (1982) ADSCrossRefGoogle Scholar
  19. 19.
    D. Bäuerle, Laser Processing and Chemistry, 3rd edn. (Springer, Berlin, 2000), Chap. 28, p. 583 Google Scholar
  20. 20.
    P.Y. Yu, M. Cardona, Fundamentals of Semiconductors, 3rd edn. (Springer, Berlin, 2001), Chap. 6, p. 254 Google Scholar
  21. 21.
    G.E. Jellison, D.H. Lowndes, Appl. Phys. Lett. 51, 352 (1987) ADSCrossRefGoogle Scholar
  22. 22.
    K. Sokolowski-Tinten, J. Bialkowski, D. von der Linde, Phys. Rev. B, Condens. Matter Mater. Phys. 51, 14186 (1995) ADSCrossRefGoogle Scholar
  23. 23.
    C.H. Durney, C.C. Johnson, Introduction to Modern Electromagnetics (McGraw-Hill, New York, 1969), p. 83 Google Scholar
  24. 24.
    I.S. Grant, W.R. Phillips, Electromagnetism, 2nd edn. (Wiley, New York, 1975), p. 35 Google Scholar
  25. 25.
    B. Hecht, H. Bielefeldt, L. Novotny, Y. Inouye, D.W. Pohl, Phys. Rev. Lett. 77, 1889 (1996) ADSCrossRefGoogle Scholar
  26. 26.
    H. Ditlbacher, J.R. Krenn, N. Felidj, B. Lamprecht, G. Schider, M. Salerno, A. Leitner, F.R. Aussenegg, Appl. Phys. Lett. 80, 404 (2002) ADSCrossRefGoogle Scholar
  27. 27.
    S.S. Wellershoff, J. Hohlfeld, J. Güdde, E. Matthias, Appl. Phys. A 69, S99 (1999) ADSGoogle Scholar
  28. 28.
    C. Kittel, Introduction to Solid State Physics, 5th edn. (Wiley, New York, 1976), p. 32 and p. 126 Google Scholar
  29. 29.
    O. Madelung, M. Schulz, H. Weiss (eds.), Landolt-Börnstein. New Series, Group III, vol. 17 (Springer, Berlin, 1984), p. 18 Google Scholar
  30. 30.
    J. Wang, C. Guo, J. Appl. Phys. 102, 053522 (2007) ADSCrossRefGoogle Scholar
  31. 31.
    G. Miyaji, K. Miyazaki, Appl. Phys. Lett. 91, 123102 (2007) ADSCrossRefGoogle Scholar
  32. 32.
    G. Miyaji, K. Miyazaki, Opt. Express 16, 16265 (2008) ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • Takuro Tomita
    • 1
  • Ryota Kumai
    • 1
  • Hidenori Nomura
    • 1
  • Shigeki Matsuo
    • 1
  • Shuichi Hashimoto
    • 1
  • Ken Morita
    • 2
  • Toshiro Isu
    • 2
  1. 1.Department of Ecosystem EngineeringThe University of TokushimaTokushimaJapan
  2. 2.Center for Frontier Research of EngineeringThe University of TokushimaTokushimaJapan

Personalised recommendations