Applied Physics A

, Volume 102, Issue 4, pp 939–942

Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

  • H. F. Tian
  • Y. G. Zhao
  • X. L. Jiang
  • J. P. Shi
  • H. J. Zhang
  • J. R. Sun
Article

DOI: 10.1007/s00339-011-6276-5

Cite this article as:
Tian, H.F., Zhao, Y.G., Jiang, X.L. et al. Appl. Phys. A (2011) 102: 939. doi:10.1007/s00339-011-6276-5

Abstract

The authors report on the fabrication and electronic transport property of LaAlO3/Nb-doped SrTiO3 heterostructure. The current–voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 104. More interestingly, the relaxation of junction current after switching follows the Curie–von Schweidler law Jtn with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.

Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • H. F. Tian
    • 1
    • 2
  • Y. G. Zhao
    • 1
  • X. L. Jiang
    • 1
  • J. P. Shi
    • 1
  • H. J. Zhang
    • 1
  • J. R. Sun
    • 2
  1. 1.Department of Physics and the Key Laboratory of Atomic and Nanosciences, Ministry of EducationTsinghua UniversityBeijingChina
  2. 2.Beijing National Laboratory for Condensed Matter Physics, Institute of PhysicsChinese Academy of SciencesBeijingChina

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