Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
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A model that describes the homogeneous migration of oxygen vacancies as a function of electric field, temperature, and activation energy of diffusion was used to investigate the resistance switching and retention characteristics of memristive SrTiO3 Schottky devices. Numerical simulations suggest that, though ionic motion results in switching, it is not possible to meet the criteria of fast switching and long retention simultaneously; conditions that lead to sufficiently fast switching also lead to unacceptably fast decays of programmed states. However, an operational window is found when a term accounting for local enhancement of electric field in the dielectric is included. A discussion of the appropriateness of this inclusion is provided.
KeywordsActivation Energy Oxygen Vacancy Drift Velocity Resistance Switching Tunneling Current
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