Applied Physics A

, Volume 100, Issue 4, pp 987–990 | Cite as

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

  • Xinman Chen
  • Guangheng Wu
  • Hailei Zhang
  • Ni Qin
  • Tao Wang
  • Feifei Wang
  • Wangzhou Shi
  • Dinghua Bao
Article

Abstract

We report on reversible bipolar resistance switching effects in multiferroic BiFeO3 thin films without electroforming. The BiFeO3 thin films with (110) preferential orientation were prepared on LaNiO3-electrodized Si substrates with a Pt/BiFeO3/LaNiO3 device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.

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Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • Xinman Chen
    • 1
    • 2
  • Guangheng Wu
    • 2
  • Hailei Zhang
    • 1
  • Ni Qin
    • 2
  • Tao Wang
    • 1
  • Feifei Wang
    • 1
  • Wangzhou Shi
    • 1
  • Dinghua Bao
    • 2
  1. 1.Key Laboratory of Optoelectronic Material and Device, Mathematics and Science CollegeShanghai Normal UniversityShanghaiP.R. China
  2. 2.State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and EngineeringSun Yat-Sen UniversityGuangzhouP.R. China

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