Applied Physics A

, Volume 99, Issue 2, pp 511–514

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

  • C. H. Jia
  • Y. H. Chen
  • X. L. Zhou
  • A. L. Yang
  • G. L. Zheng
  • X. L. Liu
  • S. Y. Yang
  • Z. G. Wang
Article

DOI: 10.1007/s00339-010-5599-y

Cite this article as:
Jia, C.H., Chen, Y.H., Zhou, X.L. et al. Appl. Phys. A (2010) 99: 511. doi:10.1007/s00339-010-5599-y

Abstract

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO3 heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48±0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO3. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO3. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • C. H. Jia
    • 1
  • Y. H. Chen
    • 1
  • X. L. Zhou
    • 1
  • A. L. Yang
    • 1
  • G. L. Zheng
    • 1
  • X. L. Liu
    • 1
  • S. Y. Yang
    • 1
  • Z. G. Wang
    • 1
  1. 1.Key Laboratory of Semiconductor Material Science, Institute of SemiconductorsChinese Academy of ScienceBeijingChina

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