Applied Physics A

, Volume 99, Issue 3, pp 673–677 | Cite as

Tuning defect-related photoluminescence of Ge nanocrystals by stress

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Abstract

Ge nanocrystals embedded in SiO2 and Lu2O3 thin films were fabricated using a pulsed laser deposition method. Two dimensional finite element calculations and Raman spectra clearly revealed that the Ge nanocrystals certainly experienced greater compressive stress in a Lu2O3 thin film than in a SiO2 thin film. This may lead to much more stress-relaxing defects at the interface of Ge nanocrystals embedded in a Lu2O3 thin film and thus enhances the intensity of defect-related photoluminescence. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in the defect-related photoluminescence property.

Keywords

Raman Spectrum Raman Peak Growth Stress Pulse Laser Deposition Method Nanocrystal Formation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  1. 1.Department of PhysicsJiangxi Normal UniversityNanchangP.R. China
  2. 2.Department of Electronics Materials Engineering, Research School of Physical Science and EngineeringAustralia National UniversityCanberraAustralia

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