Applied Physics A

, Volume 98, Issue 3, pp 509–515 | Cite as

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

  • Yen-Kuang Kuo
  • Syuan-Huei Horng
  • Sheng-Horng Yen
  • Miao-Chan Tsai
  • Man-Fang Huang
Article

Abstract

The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.

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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Yen-Kuang Kuo
    • 1
  • Syuan-Huei Horng
    • 2
  • Sheng-Horng Yen
    • 1
  • Miao-Chan Tsai
    • 2
  • Man-Fang Huang
    • 2
  1. 1.Department of PhysicsNational Changhua University of EducationChanghuaTaiwan
  2. 2.Institute of PhotonicsNational Changhua University of EducationChanghuaTaiwan

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