Applied Physics A

, Volume 98, Issue 3, pp 509–515 | Cite as

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

  • Yen-Kuang Kuo
  • Syuan-Huei Horng
  • Sheng-Horng Yen
  • Miao-Chan Tsai
  • Man-Fang Huang


The optical properties of blue-violet InGaN light-emitting diodes under normal and reversed polarizations are numerically studied. The best light-emitting performance under normal and reversed polarization is obtained in a single quantum-well structure and double quantum-well structure, respectively. The key factors responsible for these phenomena are presumably the carrier concentration distribution and the amount of carriers in quantum wells. The turn-on voltage of light-emitting diodes under reversed polarization is lower than that of light-emitting diodes under normal polarization, due mainly to lower potential heights for electrons and holes in the active region.


Reversed Polarization Normal Polarization Carrier Distribution Piezoelectric Polarization Valence Band Offset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Yen-Kuang Kuo
    • 1
  • Syuan-Huei Horng
    • 2
  • Sheng-Horng Yen
    • 1
  • Miao-Chan Tsai
    • 2
  • Man-Fang Huang
    • 2
  1. 1.Department of PhysicsNational Changhua University of EducationChanghuaTaiwan
  2. 2.Institute of PhotonicsNational Changhua University of EducationChanghuaTaiwan

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