Applied Physics A

, Volume 97, Issue 1, pp 179–184 | Cite as

Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure

  • Bernard Piechal
  • Jens W. Tomm
  • Artem Bercha
  • Witold Trzeciakowski
  • Martin Reufer
  • Alvaro Gomez-Iglesias
Article

Abstract

The hydrostatic pressure behavior of red-emitting diode lasers packaged on Si, AlN, and diamond submounts is studied in the 0–2 GPa range by emission and photocurrent spectroscopy. Photocurrent spectroscopy allows for simultaneous measurement of the InGaP quantum well and (Al0.5Ga0.5)0.5In0.5P waveguide. A broadening of the absorption edge of the waveguide is observed for all devices and explained by the pressure-induced direct-to-indirect transition in this material. For the QW resonance, distinct differences are observed for differently packaged devices. Thus, very low pressure tuning rates are demonstrated for devices packaged on diamond and AlN submounts and explained by the presence of shear strain components. Consistently we find the device packaged on Si to be least affected by the strain caused by the pressure cycling.

PACS

07.35.+k 42.55.Px 62.50.-p 74.62.Fj 

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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Bernard Piechal
    • 1
  • Jens W. Tomm
    • 2
  • Artem Bercha
    • 1
  • Witold Trzeciakowski
    • 1
  • Martin Reufer
    • 3
  • Alvaro Gomez-Iglesias
    • 3
  1. 1.Institute of High Pressure Physics “UNIPRESS”WarszawaPoland
  2. 2.Max-Born-Institut für Nichtlineare Optik und KurzzeitspektroskopieBerlinGermany
  3. 3.Osram Opto Semiconductors GmbHRegensburgGermany

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