Applied Physics A

, Volume 96, Issue 2, pp 403–408 | Cite as

Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra

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Abstract

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.

PACS

81.15.Gh 81.16.Dn 81.07.Ta 78.66.Fd 

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References

  1. 1.
    C.J. Humphreys, MRS Bull. 33, 459 (2008) Google Scholar
  2. 2.
    Y. Cho, S.K. Lee, H.S. Kwack, J.Y. Kim, K.S. Lim, H.M. Kim, T.W. Kang, S.N. Lee, M.S. Seon, O.H. Nam, Y.J. Park, Appl. Phys. Lett. 83, 2578 (2003) CrossRefADSGoogle Scholar
  3. 3.
    C. Bayram, F.H. Teherani, D. Rogers, M. Razeghi, Appl. Phys. Lett. 93, 081111 (2008) CrossRefADSGoogle Scholar
  4. 4.
    F.A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, S. Tanaka, Phys. Status Solidi 240, 273 (2003) CrossRefGoogle Scholar
  5. 5.
    T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, T. Mukai, Proc. SPIE 6133, 613306 (2006) CrossRefGoogle Scholar
  6. 6.
    C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, Appl. Phys. B (2008). doi: 10.1007/s00340-008-3321-y Google Scholar
  7. 7.
    D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990) CrossRefADSGoogle Scholar
  8. 8.
    M. Petroff, A. Lorke, A. Imomoglu, Phys. Today 54, 46 (2001) CrossRefADSGoogle Scholar
  9. 9.
    K. Tachibana, T. Someya, Y. Arakawa, Appl. Phys. Lett. 74, 383 (1999) CrossRefADSGoogle Scholar
  10. 10.
    B. Damilano, N. Grandjean, S. Dalmasso, J. Massies, Appl. Phys. Lett. 75, 3751 (1999) CrossRefADSGoogle Scholar
  11. 11.
    O. Moriwaki, T. Someya, K. Tachibana, S. Ishida, Y. Arakawa, Appl. Phys. Lett. 76, 2361 (2000) CrossRefADSGoogle Scholar
  12. 12.
    Y.K. Su, S.J. Chang, L.W. Ji, C.S. Chang, L.W. Wu, W.C. Lai, T.H. Fang, K.T. Lam, Semicond. Sci. Technol. 19, 389 (2004) CrossRefADSGoogle Scholar
  13. 13.
    S. Choi, J. Jang, S. Yi, J. Kim, W. Jung, Proc. SPIE 6479, 64791F (2007) CrossRefGoogle Scholar
  14. 14.
    V. Ranjan, G. Allan, C. Priester, C. Delerue, Phys. Rev. B 68, 115305 (2003) CrossRefADSGoogle Scholar
  15. 15.
    I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, Appl. Phys. Rev. 89, 5815 (2001) CrossRefADSGoogle Scholar
  16. 16.
    K.S. Kim, C.H. Hong, W.H. Lee, C.S. Kim, O.H. Cha, G.M. Yang, E.K. Suh, K.Y. Lim, H.J. Lee, H.K. Cho, J.Y. Lee, J.M. Seo, MRS Int. J. Nitride Semicond. Res. 5S1, W11.74 (2000) Google Scholar
  17. 17.
    M. Androulidaki, N.T. Pelekanos, K. Tsagaraki, E. Dimakis, E. Iliopoulos, A. Adikimenakis, E. Bellet-Amalric, D. Jalabert, A. Georgakilas, Phys. Status Solidi 6, 1866 (2006) Google Scholar
  18. 18.
    S.L. Chuang, C.S. Chang, Phys. Rev. B 54, 2491 (1996) CrossRefADSGoogle Scholar
  19. 19.
    M. Grundmann, O. Stier, D. Bimberg, Phys. Rev. B 52, 11969 (1995) CrossRefADSGoogle Scholar
  20. 20.
    C.G. Van de Walle, M.D. McCluskey, C.P. Master, L.T. Romano, N.M. Johnson, Mat. Sci. Eng. B 59, 274 (1999) CrossRefGoogle Scholar
  21. 21.
    O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eicjkhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L.F. Eastman, J. Phys. Condens. Matter 14, 3399 (2002) CrossRefADSGoogle Scholar
  22. 22.
    V.A. Fonoberov, A.A. Balandin, J. Appl. Phys. 94, 7178 (2003) CrossRefADSGoogle Scholar
  23. 23.
    S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995) Google Scholar
  24. 24.
    S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996) CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  1. 1.Center for Quantum Devices, Department of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonUSA

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