Applied Physics A

, Volume 95, Issue 4, pp 1129–1135 | Cite as

Low capacitance CMOS silicon photodetectors for optical clock injection

  • S. Latif
  • S. E. Kocabas
  • L. Tang
  • C. Debaes
  • D. A. B. Miller


We have studied the response of CMOS compatible detectors fabricated in a silicon-on-sapphire (SOS) process, operated under short pulse excitation in the blue. These high speed, low capacitance detectors would be suitable for very precise, surface-normal clock injection with silicon CMOS. We characterize the capacitance of the detector structure through a combination of experimental techniques and circuit-level and electromagnetic simulations. The transit-time-limited response of the detectors is validated through pump–probe experiments. Detector response times of ∼35 ps have been measured, and devices have capacitance as low as ∼4 fF.


42.82.Ds 85.40.-e 85.60.Bt 85.60.Gz 


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Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • S. Latif
    • 1
  • S. E. Kocabas
    • 1
  • L. Tang
    • 2
  • C. Debaes
    • 3
  • D. A. B. Miller
    • 1
  1. 1.Department of Electrical EngineeringGinzton Laboratory, Stanford UniversityStanfordUSA
  2. 2.Department of Applied Physics, Ginzton LaboratoryStanford UniversityStanfordUSA
  3. 3.Department of Applied Physics and PhotonicsVrije Universitiet BrusselBrusselsBelgium

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