Applied Physics A

, Volume 96, Issue 1, pp 197–205

Zinc oxide, a multifunctional material: from material to device applications

  • E. Fortunato
  • A. Gonçalves
  • A. Pimentel
  • P. Barquinha
  • G. Gonçalves
  • L. Pereira
  • I. Ferreira
  • R. Martins
Invited paper

DOI: 10.1007/s00339-009-5086-5

Cite this article as:
Fortunato, E., Gonçalves, A., Pimentel, A. et al. Appl. Phys. A (2009) 96: 197. doi:10.1007/s00339-009-5086-5

Abstract

In this paper we report on some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide produced by radio frequency magnetron sputtering at room temperature, with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties, or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer to our experience in producing n-type doped zinc oxide as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors, while the undoped zinc oxide can be used as active layer of fully transparent thin film transistors.

PACS

81.05.Hd 73.61.Le 81.15.Cd 

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • E. Fortunato
    • 1
  • A. Gonçalves
    • 1
  • A. Pimentel
    • 1
  • P. Barquinha
    • 1
  • G. Gonçalves
    • 1
  • L. Pereira
    • 1
  • I. Ferreira
    • 1
  • R. Martins
    • 1
  1. 1.Materials Science Department/CENIMAT, Faculty of Sciences and TechnologyNew University of Lisbon and CEMOP-UNINOVACaparicaPortugal

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