Bias stress effect in low-voltage organic thin-film transistors
- 825 Downloads
The bias stress effect in pentacene organic thin-film transistors has been investigated. The transistors utilize a thin gate dielectric based on an organic self-assembled monolayer and thus can be operated at low voltages. The bias stress-induced threshold voltage shift has been analyzed for different drain-source voltages. By fitting the time-dependent threshold voltage shift to a stretched exponential function, both the maximum (equilibrium) threshold voltage shift and the time constant of the threshold voltage shift were determined for each drain-source voltage. It was found that both the equilibrium threshold voltage shift and the time constant decrease significantly with increasing drain-source voltage. This suggests that when a drain-source voltage is applied to the transistor during gate bias stress, the tilting of the HOMO and LUMO bands along the channel creates a pathway for the fast release of trapped carriers.
PACS71.20.Rv 72.80.Le 73.61.Ph 85.30.Tv
- 22.S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, Hoboken, 2007) Google Scholar