Applied Physics A

, Volume 94, Issue 3, pp 515–519 | Cite as

Exponential ionic drift: fast switching and low volatility of thin-film memristors

Rapid communication

Abstract

We investigate the exponential dependence of switching speeds in thin-film memristors for high electric fields and elevated temperatures. An existing nonlinear ionic drift model and our simulation results explain the very large ratios for the state lifetime to switching speed experimentally observed in devices for which resistance switching is due to ion migration. Given the activation barriers of the drifting species, it is possible to predict the volatility and switching time for various material systems.

PACS

61.72.-y 66.30.-h 85.35.-p 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur, H.S.P. Wong, Proc. IEEE 89, 259 (2001) CrossRefGoogle Scholar
  2. 2.
    K.K. Likharev, D.B. Strukov, in Introducing Molecular Electronics. Lecture Notes in Physics (Springer, Berlin, 2006), p. 447 CrossRefGoogle Scholar
  3. 3.
    P.J. Kuekes, G.S. Snider, R.S. Williams, Sci. Am. 293, 72 (2005) CrossRefGoogle Scholar
  4. 4.
    D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008) CrossRefADSGoogle Scholar
  5. 5.
    R. Waser, M. Aono, Nat. Mater. 6, 833 (2007) CrossRefADSGoogle Scholar
  6. 6.
    J.C. Scott, L.D. Bozano, Adv. Mater. 19, 1452 (2007) CrossRefGoogle Scholar
  7. 7.
    N.F. Mott, R.W. Gurney, Electronic Processes in Ionic Crystals, 2nd edn. (Dover, New York, 1940) MATHGoogle Scholar
  8. 8.
    J. Blanc, D.L. Staebler, Phys. Rev. B 4, 3548 (1971) CrossRefADSGoogle Scholar
  9. 9.
    J. He, R.K. Behera, M.W. Finnis, X. Li, E.C. Dickey, S.R. Phillpot, S.B. Sinnott, Acta Mater. 55, 4325 (2007) CrossRefGoogle Scholar
  10. 10.
    J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008) CrossRefGoogle Scholar
  11. 11.
    C.A. Richter, D.R. Stewart, D.A.A. Ohlberg, R.S. Williams, Appl. Phys. A 80, 1355 (2005) CrossRefGoogle Scholar
  12. 12.
    K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Nature 433, 47 (2005) CrossRefADSGoogle Scholar
  13. 13.
    T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, M. Aono, Jpn. J. Appl. Phys. 45, L364 (2006) CrossRefADSGoogle Scholar
  14. 14.
    D.B. Strukov, J.L. Borghetti, R.S. Williams, Small (2008, accepted) Google Scholar
  15. 15.
    A.G. Tangena, J. Middlehoek, N.F. de Rooij, J. Appl. Phys. 49, 2876 (1978) CrossRefADSGoogle Scholar
  16. 16.
    International technology roadmap for semiconductor, 2007 edition. Online at http://www.itrs.net
  17. 17.
    N. Cabrera, N.F. Mott, Rep. Prog. Phys. 12, 163 (1948) CrossRefADSGoogle Scholar
  18. 18.
    S. Murugavel, B. Roling, J. Non-Cryst. Solids 351, 2819 (2005) CrossRefADSGoogle Scholar
  19. 19.
    M.J. Dignam, J. Phys. Chem. 29, 249 (1967) Google Scholar
  20. 20.
    H. Iddir, S. Ogut, P. Zapol, N.D. Browning, Phys. Rev. B 75, 073203 (2007) CrossRefADSGoogle Scholar
  21. 21.
    W.G. Spitzer, R.C. Miller, D. A Kleinman, L.E. Howarth, Phys. Rev. 126, 1710 (1962) CrossRefADSGoogle Scholar
  22. 22.
    R.A. Parker, Phys. Rev. 124, 1713 (1961) CrossRefADSGoogle Scholar
  23. 23.
    R.A. Parker, Phys. Rev. 124, 1719 (1961) CrossRefADSGoogle Scholar
  24. 24.
    J. McPherson, J.Y. Kim, A. Shanware, H. Mogul, Appl. Phys. Lett. 82, 2121 (2003) CrossRefADSGoogle Scholar
  25. 25.
    R. Waser, R. Hagenbeck, Acta Mater. 48, 797 (2000) CrossRefGoogle Scholar
  26. 26.
    J.H. Park, B.T. Ahn, J. Appl. Phys. 93, 883 (2003) CrossRefADSGoogle Scholar
  27. 27.
    G. Mills, H. Jonsson, Phys. Rev. Lett. 72, 1124 (1994) CrossRefADSGoogle Scholar
  28. 28.
    P.I. Kingsbury, W.D. Ohlsen, O.W. Johnson, Phys. Rev. 175, 1099 (1968) CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  1. 1.Hewlett-Packard LaboratoriesPalo AltoUSA

Personalised recommendations