Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
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Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high-κ gate dielectric in a gate last process. The GdScO3 films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high Ion/Ioff ratios of 106–108, and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm2/Vs for the conventional and 366 cm2/Vs for the strained silicon substrates were determined.
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