Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition
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Amorphous chalcogenide thin films were prepared from As2Se3, As3Se2 and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.
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