Applied Physics A

, Volume 91, Issue 1, pp 1–5

A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface

  • V.J. Logeeswaran
  • A. Sarkar
  • M.S. Islam
  • N.P. Kobayashi
  • J. Straznicky
  • Xuema Li
  • Wei Wu
  • Sagi Mathai
  • M.R.T. Tan
  • Shih-Yuan Wang
  • R.S. Williams
Invited paper

DOI: 10.1007/s00339-007-4394-x

Cite this article as:
Logeeswaran, V., Sarkar, A., Islam, M. et al. Appl. Phys. A (2008) 91: 1. doi:10.1007/s00339-007-4394-x

Abstract

We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires. The high-speed electrical signal measurements from the photoconductor are performed by an integrated coplanar waveguide transmission line. The demonstrated ability to grow intersecting InP nanowires on hydrogenated microcrystalline Si surfaces will facilitate the construction of ultra-fast photodetectors on a wide range of substrates.

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Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • V.J. Logeeswaran
    • 1
  • A. Sarkar
    • 1
  • M.S. Islam
    • 1
  • N.P. Kobayashi
    • 2
  • J. Straznicky
    • 3
  • Xuema Li
    • 3
  • Wei Wu
    • 3
  • Sagi Mathai
    • 3
  • M.R.T. Tan
    • 3
  • Shih-Yuan Wang
    • 3
  • R.S. Williams
    • 3
  1. 1.Department of Electrical and Computer EngineeringUniversity of California at DavisDavisUSA
  2. 2.Jack Baskin School of EngineeringUniversity of California at Santa CruzSanta CruzUSA
  3. 3.Quantum Science Research, Advanced StudiesHewlett-Packard LaboratoriesPalo AltoUSA

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