Applied Physics A

, Volume 90, Issue 3, pp 395–398 | Cite as

Comparison of electronic structures of mass-selected Ag clusters and thermally grown Ag islands on sputter-damaged graphite surfaces

  • R. Dietsche
  • D.C. Lim
  • M. Bubek
  • I. Lopez-Salido
  • G. Ganteför
  • Y.D. Kim


Ag cluster anions consisting of 3–16 atoms were deposited on sputter-damaged HOPG surfaces using a soft-landing technique (mean deposition energy less than 0.2 eV/atom) at room temperature. For investigations of the structures of deposited clusters, X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used. In addition, the chemical properties of deposited clusters were studied using atomic oxygen and CO. Comparison of the properties of deposited Ag clusters and Ag islands with similar sizes grown by evaporating Ag atoms on the same substrate shows different results, implying that two different preparation methods give either different shapes of Ag clusters and islands, or dissimilar metal–support interactions.


Scanning Tunneling Microscopy Scanning Tunneling Microscopy Image Core Level Shift HOPG Surface Atomic Oxygen Exposure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. 1.
    B. Yoon, H. Häkkinen, U. Landman, A.S. Wörz, J.M. Antonietti, S. Abbet, K. Judai, U. Heiz, Science 307, 403 (2005)CrossRefADSGoogle Scholar
  2. 2.
    K. Judai, S. Abbet, A.S. Wörz, U. Heiz, C.R. Henry, J. Am. Chem. Soc. 126, 2732 (2004)CrossRefGoogle Scholar
  3. 3.
    A.S. Wörz, K. Judai, S. Abbet, U. Heiz, J. Am. Chem. Soc. 125, 7964 (2003)CrossRefGoogle Scholar
  4. 4.
    U. Heiz, A. Sanchez, S. Abbet, W.-D. Schneider, J. Am. Chem. Soc. 121, 3214 (1999)CrossRefGoogle Scholar
  5. 5.
    U. Heiz, F. Vanolli, A. Sanchez, W.-D. Schneider, J. Am. Chem. Soc. 120, 9668 (1998)CrossRefGoogle Scholar
  6. 6.
    S. Lee, C.Y. Fan, T.P. Wu, S.L. Anderson, J. Chem. Phys. 123, 124710 (2005)CrossRefADSGoogle Scholar
  7. 7.
    X. Tong, L. Benz, P. Kemper, H. Metiu, M.T. Bowers, S.K. Buratto, J. Am. Chem. Soc. 127, 13516 (2007)CrossRefGoogle Scholar
  8. 8.
    I. Lopez-Salido, D.C. Lim, Y.D. Kim, Surf. Sci. 588, 6 (2005)CrossRefADSGoogle Scholar
  9. 9.
    D.C. Lim, I. Lopez-Salido, Y.D. Kim, Surf. Sci. 598, 96 (2005)CrossRefADSGoogle Scholar
  10. 10.
    I. Lopez-Salido, D.C. Lim, R. Dietsche, N. Bertram, Y.D. Kim, J. Phys. Chem. B 110, 1128 (2006)CrossRefGoogle Scholar
  11. 11.
    D.C. Lim, I. Lopez-Salido, R. Dietsche, M. Bubek, Y.D. Kim, Surf. Sci. 600, 507 (2006)CrossRefADSGoogle Scholar
  12. 12.
    S.G. Hall, M.B. Nielsen, R.E. Palmer, J. Appl. Phys. 83, 733 (1998)CrossRefADSGoogle Scholar
  13. 13.
    S.J. Carroll, S.G. Hall, R.E. Palmer, R. Smith, Phys. Rev. Lett. 81, 3715 (1998)CrossRefADSGoogle Scholar
  14. 14.
    S.J. Carroll, S. Pratontep, M. Streun, R.E. Palmer, S. Hobday, R. Smith, J. Chem. Phys. 113, 7723 (2000)CrossRefADSGoogle Scholar
  15. 15.
    S. Gibilisco, M. Di Vece, S. Palomba, G. Faraci, R.E. Palmer, J. Chem. Phys. 125, 084704 (2006)CrossRefGoogle Scholar
  16. 16.
    M. Di Vece, S. Palomba, R.E. Palmer, Phys. Rev. B 72, 073407 (2005)CrossRefADSGoogle Scholar
  17. 17.
    D.C. Lim, R. Dietsche, M. Bubek, T. Ketterer, G. Ganteför, Y.D. Kim, Chem. Phys. Lett. 439, 364 (2007)CrossRefADSGoogle Scholar
  18. 18.
    H. Haberland, M. Mall, M. Moseler, Y. Qiang, T. Reiners, Y. Thurner, J. Vac. Sci. Technol. A 12, 2925 (1994)CrossRefADSGoogle Scholar
  19. 19.
    V.I. Bukhtiyarov, A.F. Carley, L.A. Dollard, M.W. Roberts, Surf. Sci. 381, L605 (1997)CrossRefGoogle Scholar
  20. 20.
    A. Sandell, J. Libuda, P.A. Brühwiler, S. Andersson, A.J. Maxwell, M. Bäumer, N. Mårtensson, H.J. Freund, J. Vac. Sci. Technol. A 14, 1546 (1996)CrossRefADSGoogle Scholar
  21. 21.
    H. Hövel, T. Becker, A. Bettac, B. Reihl, M. Tschudy, E.J. Williams, J. Appl. Phys. 81, 154 (1997)CrossRefADSGoogle Scholar
  22. 22.
    S.H. Jeong, D.C. Lim, J.-H. Boo, S.B. Lee, H.N. Hwang, C.C. Hwang, Y.D. Kim, Appl. Catal. A 320, 152 (2007)CrossRefGoogle Scholar
  23. 23.
    H. Häkkinen, M. Moseler, U. Landman, Phys. Rev. Lett. 89, 033401 (2002)CrossRefADSGoogle Scholar
  24. 24.
    B. Richter, H. Kuhlenbeck, H.-J. Freund, P.S. Bagus, Phys. Rev. Lett. 93, 026805 (2004)CrossRefADSGoogle Scholar
  25. 25.
    A.N. Obraztsov, A.P. Volkov, A.I. Boronin, S.V. Kosheev, Diam. Relat. Mater. 11, 813 (2002)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • R. Dietsche
    • 1
  • D.C. Lim
    • 2
  • M. Bubek
    • 1
  • I. Lopez-Salido
    • 1
  • G. Ganteför
    • 1
  • Y.D. Kim
    • 3
  1. 1.Department of PhysicsUniversity of KonstanzKonstanzGermany
  2. 2.Department of Surface TechnologyKorea Institute of Materials ScienceChangwonKorea
  3. 3.Department of ChemistrySungkyunkwan UniversitySuwonKorea

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