Applied Physics A

, Volume 90, Issue 3, pp 581–589

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current–voltage characteristics

  • A.K. Chauhan
  • D.K. Aswal
  • S.P. Koiry
  • S.K. Gupta
  • J.V. Yakhmi
  • C. Sürgers
  • D. Guerin
  • S. Lenfant
  • D. Vuillaume
Article

DOI: 10.1007/s00339-007-4336-7

Cite this article as:
Chauhan, A., Aswal, D., Koiry, S. et al. Appl. Phys. A (2008) 90: 581. doi:10.1007/s00339-007-4336-7

Abstract

We report the deposition of 3-aminopropyltrimethoxysilane (APTMS) multilayers on SiOx/Si(p++) substrates by a layer-by-layer self-assembly process. The multilayers were grafted in a glove box having nitrogen ambient with both humidity and oxygen contents <1 ppm using APTMS solutions prepared in an anhydrous toluene. Deposition of the multilayers has been carried out as a function of solution concentration and grafting time. Characterization of the multilayers using static de-ionized water contact angle, ellipsometry, X-rayphotoelectron spectroscopy and atomic force microscope measurements revealed that self-assembling of the multilayers takes place in two distinct stages: (i) the first APTMS monolayer chemisorbs on a hydroxylated oxide surface by a silanization process and, (ii) the surface amino group of the first monolayer chemisorbs the hydrolyzed silane group of other APTMS molecules present in the solution, leading to the formation of a bilayer. The second stage is a self-replicating process that results in the layer-by-layer self-assembly of the multilayers with trapped NH3+ ions. The current–voltage characteristics of the multilayers exhibit a hysteresis effect along with a negative differential resistance, suggesting their potential application in the molecular memory devices. A possible mechanism for the observed hysteresis effect based on filling and de-filling of the NH3+ acting as traps is presented.

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • A.K. Chauhan
    • 1
  • D.K. Aswal
    • 1
  • S.P. Koiry
    • 1
  • S.K. Gupta
    • 1
  • J.V. Yakhmi
    • 1
  • C. Sürgers
    • 2
  • D. Guerin
    • 3
  • S. Lenfant
    • 3
  • D. Vuillaume
    • 3
  1. 1.Technical Physics and Prototype Engineering DivisionBhabha Atomic Research CentreMumbaiIndia
  2. 2.Physikalisches Institut and Center for Functional NanostructuresUniversität KarlsruheKarlsruheGermany
  3. 3.Molecular Nanostructures and Devices GroupInstitut d’Electronique, Microelectronique et Nanotechnologie – CNRSVilleneuve d’Ascq CedexFrance

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