Applied Physics A

, Volume 90, Issue 3, pp 577–579

Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition

  • J. Schubert
  • O. Trithaveesak
  • W. Zander
  • M. Roeckerath
  • T. Heeg
  • H.Y. Chen
  • C.L. Jia
  • P. Meuffels
  • Y. Jia
  • D.G. Schlom
Article

Abstract

Epitaxial thin films of LaLuO3 were deposited on SrTiO3(100) and SrRuO3/SrTiO3(100) or SrRuO3/LaAlO3(100) substrates using pulsed-laser deposition. They were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and atomic force microscopy. Smooth, c-axis oriented films with a channeling minimum yield of 3% were obtained. The electrical characterization of Au/LaLuO3/SrRuO3/SrTiO3(100) and Au/LaLuO3/SrRuO3/LaAlO3(100) metal–insulator–metal capacitor stacks revealed a dielectric constant of κ>45 and a breakdown field of 2 MV/cm for 100 nm thick epitaxial LaLuO3 films.

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Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • J. Schubert
    • 1
  • O. Trithaveesak
    • 1
  • W. Zander
    • 1
  • M. Roeckerath
    • 1
  • T. Heeg
    • 1
  • H.Y. Chen
    • 2
  • C.L. Jia
    • 2
  • P. Meuffels
    • 3
  • Y. Jia
    • 4
  • D.G. Schlom
    • 4
  1. 1.Institute of Bio- and Nanosystems and Center of Nanoelectronic Systems for Information TechnologyResearch Centre JülichJülichGermany
  2. 2.Institute of Solid State Research and Ernst Ruska-Centre for Microscopy and Spectroscopy with ElectronsResearch Centre JülichJülichGermany
  3. 3.Institute of Solid State ResearchResearch Centre JülichJülichGermany
  4. 4.Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkUSA

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