Photoinduced interface charging in multiphoton photoemission from ultrathin Ag films on Si(100)
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The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole.
KeywordsPhotoemission Spectrum Surface Dipole Fermi Edge Transient Photovoltage Photoemission Peak
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- 5.C. Wesenberg, O. Autzen, E. Hasselbrink, Appl. Phys. A 88, in print (2007)Google Scholar
- 10.M. Horn von Hoegen, T. Schmidt, M. Henzler, G. Meyer, D. Winau, K.H. Rieder, Surf. Sci. 331–333, 575 (1995)Google Scholar
- 16.K. Horn, M. Alonso, R. Cimino, Appl. Surf. Sci. 56–58, 271 (1992)Google Scholar