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Applied Physics A

, Volume 88, Issue 3, pp 459–464 | Cite as

Photoinduced interface charging in multiphoton photoemission from ultrathin Ag films on Si(100)

  • S. Schramm
  • S. Dantscher
  • C. Schramm
  • O. Autzen
  • C. Wesenberg
  • E. Hasselbrink
  • W. PfeifferEmail author
Article

Abstract

The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole.

Keywords

Photoemission Spectrum Surface Dipole Fermi Edge Transient Photovoltage Photoemission Peak 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • S. Schramm
    • 1
  • S. Dantscher
    • 1
  • C. Schramm
    • 1
  • O. Autzen
    • 2
  • C. Wesenberg
    • 2
  • E. Hasselbrink
    • 2
  • W. Pfeiffer
    • 3
    Email author
  1. 1.Physikalisches InstitutUniversität WürzburgWürzburgGermany
  2. 2.Physikalische ChemieUniversität Duisburg-EssenEssenGermany
  3. 3.Fakultät für PhysikUniversität BielefeldBielefeldGermany

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