Applied Physics A

, Volume 88, Issue 3, pp 459–464 | Cite as

Photoinduced interface charging in multiphoton photoemission from ultrathin Ag films on Si(100)

  • S. Schramm
  • S. Dantscher
  • C. Schramm
  • O. Autzen
  • C. Wesenberg
  • E. Hasselbrink
  • W. PfeifferEmail author


The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole.


Photoemission Spectrum Surface Dipole Fermi Edge Transient Photovoltage Photoemission Peak 
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Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • S. Schramm
    • 1
  • S. Dantscher
    • 1
  • C. Schramm
    • 1
  • O. Autzen
    • 2
  • C. Wesenberg
    • 2
  • E. Hasselbrink
    • 2
  • W. Pfeiffer
    • 3
    Email author
  1. 1.Physikalisches InstitutUniversität WürzburgWürzburgGermany
  2. 2.Physikalische ChemieUniversität Duisburg-EssenEssenGermany
  3. 3.Fakultät für PhysikUniversität BielefeldBielefeldGermany

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