Applied Physics A

, Volume 87, Issue 3, pp 443–449 | Cite as

Characterization of electronic materials and devices by scanning near-field microscopy

  • L.J. Balk
  • R. Heiderhoff
  • J.C.H. Phang
  • Ch. Thomas
Article
First Online:
Received:
Accepted:

Abstract

Due to the reduction of structure sizes in modern electronic devices reliable characterization techniques are required in the nanometer range. Since the comparable wavelengths in investigation methods are larger, near-field techniques have to be used for nano-inspection allowing sub-wavelength resolution. Also many microscopy methods with static fields imply near-field approaches.

Analyzing several near-field approaches for fields and waves, a general concept for near-field description will be introduced which can be applied to various near-field interaction mechanisms. Based on scanning probe microscopy, different techniques are shown to determine locally miscellaneous properties which are important for modern electronic materials and devices.

Keywords

Line Source Scanning Probe Microscopy Thermal Wave Evanescent Wave Ferroelectric Domain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L.V. Azaroff, J.J. Brophy, Electronic Processes in Materials (McGraw-Hill, Ohio, 1963)Google Scholar
  2. 2.
    E. Abbe, Arch. Mikroskp. Anat. 9, 413 (1873)Google Scholar
  3. 3.
    E.H. Synge, Philos. Mag. 6, 356 (1928)Google Scholar
  4. 4.
    E.H. Synge, Philos. Mag. 13, 297 (1932)Google Scholar
  5. 5.
    H.A. Bethe, Phys. Rev. 66, 163 (1944)MATHCrossRefADSMathSciNetGoogle Scholar
  6. 6.
    U. Dürig, D.W. Pohl, F. Rohner, J. Appl. Phys. 59, 3318 (1986)CrossRefADSGoogle Scholar
  7. 7.
    E.A. Ash, G. Nicholls, Nature 237, 510 (1972)CrossRefADSGoogle Scholar
  8. 8.
    J.P. Fillard, Near Field Optics and Nanoscopy (World Scientific, Singapore, 1996)Google Scholar
  9. 9.
    D. Courjon, Near-Field Microscopy and Near-Field Optics (Imperial College Press, London, 2003)Google Scholar
  10. 10.
    C. Girard, C. Joachim, S. Gauthier, Rep. Prog. Phys. 63, 893 (2000)CrossRefADSGoogle Scholar
  11. 11.
    A. Altes, R. Heiderhoff, L.J. Balk, J. Phys. D Appl. Phys. 37, 952 (2004)CrossRefADSGoogle Scholar
  12. 12.
    S. Belaidi, P. Girard, G. Leveque, J. Appl. Phys. 81, 1023 (1997)CrossRefADSGoogle Scholar
  13. 13.
    Y. Martin, D.W. Abraham, H.K. Wickramasinghe, Appl. Phys. Lett. 52, 1103 (1988)CrossRefADSGoogle Scholar
  14. 14.
    C. Böhm, F. Saurenbach, P. Taschner, C. Roths, E. Kubalek, J. Phys. D 26, 1801 (1993)CrossRefADSGoogle Scholar
  15. 15.
    U. Behnke, D. Klümper, W. Mertin, J. Phys. D 36, 748 (2003)CrossRefADSGoogle Scholar
  16. 16.
    N. Nonnenmacher, M.P. O’Boyle, H.K. Wickramasinghe, Appl. Phys. Lett. 58, 2921 (1991)CrossRefADSGoogle Scholar
  17. 17.
    R. Shikler, N. Fried, T. Meoded, Y. Rosenwaks, Phys. Rev. B 61, 11041 (2000)CrossRefADSGoogle Scholar
  18. 18.
    S. Sadewasser, Th. Glatzel, M. Rusu, A. Jäger-Waldau, M.Ch. Lux-Steiner, Appl. Phys. Lett. 80, 2979 (2002)CrossRefADSGoogle Scholar
  19. 19.
    Ch. Thomas, I. Joachimsthaler, R. Heiderhoff, L.J. Balk, Scanning 26, 76 (2004)Google Scholar
  20. 20.
    Ch. Thomas, I. Joachimsthaler, R. Heiderhoff, L.J. Balk, J. Phys. D 37, 2785 (2004)CrossRefADSGoogle Scholar
  21. 21.
    Y. Martin, H.K. Wickramasinghe, Appl. Phys. Lett. 50, 1455 (1987)CrossRefADSGoogle Scholar
  22. 22.
    H.J. Hug, B. Stiefel, P.J.A. van Schendel, A. Moser, R. Hofer, S. Martin, H.-J. Güntherodt, S. Porthun, L. Abelmann, J.C. Lodder, G. Bochi, R.C. O’Handley, J. Appl. Phys. 83, 5609 (1998)CrossRefADSGoogle Scholar
  23. 23.
    C.C. Williams, Ann. Rev. Mater. Sci. 29, 471 (1999)CrossRefGoogle Scholar
  24. 24.
    R. Stephenson, A. Verhulst, P. De Wolf, M. Caymax, W. Vandervorst, Appl. Phys. Lett. 73, 2597 (1998)CrossRefADSGoogle Scholar
  25. 25.
    J.N. Nxumalo, D.T. Shimizu, D.J. Thomson, J. Vac. Sci. Technol. B 14, 386 (1996)CrossRefGoogle Scholar
  26. 26.
    P. De Wolf, T. Clarysse, W. Vandervorst, L. Hellemans, J. Vac. Sci. Technol. B 16, 355 (1998)CrossRefGoogle Scholar
  27. 27.
    P. De Wolf, R. Stephenson, T. Trenkler, T. Clarysse, T. Hantschel, W. Vandervorst, J. Vac. Sci. Technol. B 18, 361 (2000)CrossRefGoogle Scholar
  28. 28.
    A. Olbrich, B. Ebersberger, C. Boit, Appl. Phys. Lett. 73, 3114 (1998)CrossRefADSGoogle Scholar
  29. 29.
    P.M. Koschinski, G.B.M. Fiege, L.J. Balk, Inst. Phys. Conf. Ser. 146, 659 (1995)Google Scholar
  30. 30.
    D.W. Pohl, W. Denk, M. Lanz, Appl. Phys. Lett. 44, 651 (1984)CrossRefADSGoogle Scholar
  31. 31.
    E. Betzig, J.K. Trautman, T.D. Harris, J.S. Weiner, R.L. Kostelak, Science 251, 1468 (1991)CrossRefADSGoogle Scholar
  32. 32.
    H. Heinzelmann, D.W. Pohl, Appl. Phys. A 59, 89 (1994)CrossRefADSGoogle Scholar
  33. 33.
    L.J. Balk, R.M. Cramer, R. Heiderhoff, J.C.H. Phang, O. Sergeev, A.-K. Tiedemann, Proc. SPIE 5856, 1 (2005)CrossRefADSGoogle Scholar
  34. 34.
    M.R. Bruce, V.J. Bruce, Electron. Dev. Failure Anal. 5, 13 (2003)Google Scholar
  35. 35.
    J.C.H. Phang, Electron. Dev. Failure Anal. 5, 51 (2003)Google Scholar
  36. 36.
    F. Zenhausern, M.P. O’Boyle, H.K. Wickramasinghe, Appl. Phys. Lett. 65, 1623 (1994)CrossRefADSGoogle Scholar
  37. 37.
    F. Zenhausern, Y. Martin, H.K. Wickramasinghe, Science 269, 1083 (1995)CrossRefADSGoogle Scholar
  38. 38.
    R. Bachelot, G. Lerondel, S. Blaize, S. Aubert, A. Bruyant, P. Royer, Microsc. Res. Technol. 64, 441 (2004)Google Scholar
  39. 39.
    A. Majumdar, Ann. Rev. Mater. Sci. 29, 505 (1999)CrossRefGoogle Scholar
  40. 40.
    G.B.M. Fiege, V. Feige, J.C.H. Phang, M. Maywald, S. Görlich, L.J. Balk, Microelectron. Reliab. 38, 957 (1998)CrossRefGoogle Scholar
  41. 41.
    D.G. Cahill, Rev. Sci. Instrum. 61, 802 (1990)CrossRefADSGoogle Scholar
  42. 42.
    G.B.M. Fiege, A. Altes, R. Heiderhoff, L.J. Balk, J. Phys. D 32, L13 (1999)CrossRefADSGoogle Scholar
  43. 43.
    E. Hendarto, A. Altes, R. Heiderhoff, J.C.H. Phang, L.J. Balk, Proc. 43rd IRPS 294 (2005)Google Scholar
  44. 44.
    L.J. Balk, in: Advances in Electronics and Electron Physics (Academic Press, Boston, 1988), vol. 71, p. 1Google Scholar
  45. 45.
    X.X. Liu, R. Heiderhoff, H.P. Abicht, L.J. Balk, J. Phys. D 35, 74 (2002)CrossRefADSGoogle Scholar
  46. 46.
    U. Rabe, M. Kopycinska, S. Hirsekorn, J. Muñoz Saldaña, G.A. Schneider, W. Arnold, J. Phys. D 35, 2621 (2002)CrossRefADSGoogle Scholar
  47. 47.
    Q.R. Yin, G.R. Li, H.R. Zeng, X.X. Liu, R. Heiderhoff, L.J. Balk, Appl. Phys. A 78, 699 (2004)CrossRefADSGoogle Scholar
  48. 48.
    I. Joachimsthaler, R. Heiderhoff, L.J. Balk, Meas. Sci. Technol. 14, 87 (2003)CrossRefADSGoogle Scholar
  49. 49.
    Ch. Thomas, R. Heiderhoff, L.J. Balk, ICN+T Abstr. 1, 66 (2006)Google Scholar
  50. 50.
    A. Altes, L.J. Balk, H.L. Hartnagel, R. Heiderhoff, K. Mutamba, Ch. Thomas, NDT.net: E-J. Nondestruct. Test. 9, 655 (2004)Google Scholar
  51. 51.
    Ch. Thomas, R. Heiderhoff, L.J. Balk, in: Physics, Chemistry and Application of Nanostructures (World Scientific, Singapore, 2005), p. 254Google Scholar
  52. 52.
    Ch. Thomas, R. Heiderhoff, L.J. Balk, accepted for publication in J. Phys. Conf. Ser. (2007)Google Scholar
  53. 53.
    Ch. Thomas, R. Heiderhoff, L.J. Balk, accepted for publication in Physics, Chemistry and Application of Nanostructures (2007)Google Scholar

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • L.J. Balk
    • 1
    • 2
  • R. Heiderhoff
    • 1
  • J.C.H. Phang
    • 2
  • Ch. Thomas
    • 1
  1. 1.Fachbereich Elektrotechnik, Informationstechnik, Medientechnik, Lehrstuhl für ElektronikBergische Universität WuppertalWuppertalGermany
  2. 2.Department of Electrical and Computer Engineering, Centre for Integrated Circuit Failure Analysis and Reliability (CICFAR)National University of SingaporeSingaporeSingapore

Personalised recommendations