HgS nanoparticles: Structure and optical properties
- 248 Downloads
- 14 Citations
Abstract
Nanocrystalline HgS thin films were synthesized by using an electrochemical route under galvanostatic conditions. Quantum size effects have resulted in the change of the semi-metallic behavior of bulk β-HgS (Eg=-0.5 eV) to semiconducting behavior with an absorption onset around 1.4 eV as confirmed from optical absorption studies. Glancing angle X-ray diffraction analysis confirms the presence of β-HgS (zinc-blend structure) with prominent crystallographic planes of (200), (220) and (311) in the deposit. This is consistent with results obtained from transmission electron diffraction studies. The Raman scattering measurements identified a broad 1LO confined phonon mode at 247 cm-1 which suggests that the crystalline sizes are small.
Keywords
HgTe Convergent Beam Electron Diffraction Optical Absorption Study Electrochemical Route Laue ZonePreview
Unable to display preview. Download preview PDF.
References
- 1.A. Eychmüller, A. Hässelbarth, H. Weller, J. Luminesc. 53, 113 (1992)CrossRefGoogle Scholar
- 2.A. Mews, A.V. Kadavanich, U. Banin, A. Alivisatos, Phys. Rev. B 53, R13242 (1996)CrossRefADSGoogle Scholar
- 3.S. Rath, S.N. Sahu, Eur. Phys. Lett. 67, 294 (2004)CrossRefADSGoogle Scholar
- 4.A. Rogach, S. Kerschow, M. Burt, M. Harrison, A. Kornawski, A. Eychmüller, H. Weller, Adv. Mater. 11, 552 (1999)CrossRefGoogle Scholar
- 5.D. Schooss, A. Mews, A. Eychmüller, H. Weller, Phys. Rev. B 49, 17072 (1994)CrossRefADSGoogle Scholar
- 6.R. Thielsch, T. Böhm, R. Reiche, D. Schläfer, H.-D. Bauer, H. Böttcher, Nanostruct. Mater. 10, 131 (1998)CrossRefGoogle Scholar
- 7.G.W. Bryant, Phys. Rev. B 52, R16997 (1995)CrossRefADSGoogle Scholar
- 8.R. Zallen, M.L. Slade, Solid State Commun. 8, 1291 (1970)CrossRefGoogle Scholar
- 9.T. Limperis, J. Mudar, The Infrared Handbook Revised edn, ed. by W.L. Wolfe, G.J. Zissi (Ann, Arbor, MI: Infrared Information Analysis Center, 1989) pp. 11–77Google Scholar
- 10.P.W. Krase, Semiconductors and Semimetals, Vol. 5, ed. by R.K. Willardson, A.C. Beer (Academic, New York, 1970) pp. 15–70Google Scholar
- 11.H. Zoog, C. Malssen, J. Masek, T. Hoshino, S. Blunier, A.N. Tiwari, Semicond. Sci. Technol. 6, C36 (1991)CrossRefGoogle Scholar
- 12.R. Dornhaus, G. Nimtz, Narrow-Gap Semiconductors (Springer, Berlin, 1983), pp. 119–304CrossRefGoogle Scholar
- 13.K.-U. Gawlik, L. Kipp, M. Skibowski, N. Orlowski, R. Manzke, Phys. Rev. Lett. 78, 3165 (1997)CrossRefADSGoogle Scholar
- 14.W. Szuszkiewicz, B. Witkowska, M. Jouanne, Acta Phys. Pol. 87, 415 (1995)Google Scholar
- 15.A.T.D. Persans, Appl. Phys. Lett. 58, 1506 (1991)CrossRefADSGoogle Scholar
- 16.K.K. Nanda, S.N. Sahu, Adv. Mater. 13, 280 (2001)CrossRefGoogle Scholar
- 17.A.P. Alivisistos, Science 271, 933 (1996)CrossRefADSGoogle Scholar
- 18.Data in Science and Technology, Semiconductors other than group IV and III–V compounds ed. by R. Poerschka, O. Madalung (Springer, Berlin, 1992), p. 31Google Scholar