Applied Physics A

, Volume 85, Issue 3, pp 271–275 | Cite as

Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

  • D.E. Perea
  • J.L. Lensch
  • S.J. May
  • B.W. Wessels
  • L.J. Lauhon
Article

Abstract

We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.

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References

  1. 1.
    K. Haraguchi, T. Katsuyama, K. Hiruma, K. Ogawa, Appl. Phys. Lett. 60, 745 (1992)CrossRefADSGoogle Scholar
  2. 2.
    Y. Cui, X.F. Duan, J.T. Hu, C.M. Lieber, J. Phys. Chem. B 104, 5213 (2000)CrossRefGoogle Scholar
  3. 3.
    Y.F. Wang, K.K. Lew, T.T. Ho, L. Pan, S.W. Novak, E.C. Dickey, J.M. Redwing, T.S. Mayer, Nano Lett. 5, 2139 (2005)CrossRefGoogle Scholar
  4. 4.
    R.S. Wagner, W.C. Elli, Appl. Phys. Lett. 4, 89 (1964)CrossRefGoogle Scholar
  5. 5.
    S.C. Erwin, L.J. Zu, M.I. Haftel, A.L. Efros, T.A. Kennedy, D.J. Norris, Nature 436, 91 (2005)CrossRefADSGoogle Scholar
  6. 6.
    M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, C.M. Lieber, Nature 415, 617 (2002)CrossRefADSGoogle Scholar
  7. 7.
    L.J. Lauhon, M.S. Gudiksen, D. Wang, C.M. Lieber, Nature 420, 57 (2002)CrossRefADSGoogle Scholar
  8. 8.
    M.T. Bjork, B.J. Ohlsson, T. Sass, A.I. Persson, C. Thelander, M.H. Magnusson, K. Deppert, L.R. Wallenberg, L. Samuelson, Appl. Phys. Lett. 80, 1058 (2002)CrossRefADSGoogle Scholar
  9. 9.
    Y.Y. Wu, R. Fan, P.D. Yang, Nano Lett. 2, 83 (2002)CrossRefGoogle Scholar
  10. 10.
    L.J. Lauhon, M.S. Gudiksen, C.M. Lieber, Philos. Trans. R. Soc. London A 362, 1247 (2004)ADSGoogle Scholar
  11. 11.
    N. Panev, A.I. Persson, N. Sköld, L. Samuelson, Appl. Phys. Lett. 83, 2238 (2003)CrossRefADSGoogle Scholar
  12. 12.
    W. Lu, J. Xiang, B.P. Timko, Y. Wu, C.M. Lieber, Proc. Nat. Acad. Sci. USA 102, 10046 (2005)CrossRefADSGoogle Scholar
  13. 13.
    M.K. Miller, Atom Probe Tomography: Analysis at the Atomic Level (Kluwer Academic/Plenum, New York, 2000)Google Scholar
  14. 14.
    G.L. Kellogg, T.T. Tsong, J. Appl. Phys. 51, 1184 (1980)CrossRefADSGoogle Scholar
  15. 15.
    R.A.D. Mackenzie, J.A. Liddle, C.R.M. Grovenor, Appl. Surf. Sci. 50, 196 (1991)CrossRefGoogle Scholar
  16. 16.
    T.E. Kelly, T.T. Gribb, J.D. Olson, R.L. Martens, J.D. Shepard, S.A. Wiener, T.C. Kunicki, R.M. Ulfig, D.R. Lenz, E.M. Strennen, E. Oltman, J.H. Bunton, D.R. Strait, Microsc. Microanal. 10, 373 (2004)CrossRefADSGoogle Scholar
  17. 17.
    K. Thompson, J.H. Booske, D.J. Larson, T.F. Kelly, Appl. Phys. Lett. 87, 052108 (2005)CrossRefGoogle Scholar
  18. 18.
    D.E. Perea, J.E. Allen, S.J. May, B.W. Wessels, D.N. Seidman, L.J. Lauhon, Nano Lett. 6, 181 (2006)CrossRefGoogle Scholar
  19. 19.
    T.F. Kelly, D.J. Larson, Mater. Charact. 44, 59 (2000)CrossRefGoogle Scholar
  20. 20.
    P. Mohan, J. Motohisa, T. Fukui, Nanotechnology 16, 2903 (2005)CrossRefADSGoogle Scholar
  21. 21.
    W. Kern, J. Vossen, Thin Film Processes (Academic Press, New York, 1978)Google Scholar
  22. 22.
    Y. Cui, L.J. Lauhon, M.S. Gudiksen, J. Wang, C.M. Lieber, Appl. Phys. Lett. 78, 2214 (2001)CrossRefADSGoogle Scholar
  23. 23.
    A. Cerezo, C.R.M. Grovenor, G.D.W. Smith, Appl. Phys. Lett. 46, 567 (1985)CrossRefADSGoogle Scholar
  24. 24.
    T. Hashizume, Y. Hasegawa, A. Kobayashi, T. Sakurai, Rev. Sci. Instrum. 57, 1378 (1986)CrossRefADSGoogle Scholar
  25. 25.
    Imago, Madison, WI. The laser wavelength is 532 nm and the pulse energy can be varied from 0.03 to 2 nJGoogle Scholar
  26. 26.
    A. Cerezo, G.D.W. Smith, P.H. Clifton, Appl. Phys. Lett. 88, 154103 (2006)CrossRefGoogle Scholar
  27. 27.
    F. Vurpillot, B. Gault, A. Vella, M. Bouet, B. Deconihout, Appl. Phys. Lett. 88, 094105 (2006)CrossRefGoogle Scholar
  28. 28.
    B. Gault, F. Vurpillot, A. Bostel, A. Menand, B. Deconihout, Appl. Phys. Lett. 86, 094101 (2005)CrossRefGoogle Scholar
  29. 29.
    W.M. Bullis, Solid State Electron. 9, 143 (1966)CrossRefGoogle Scholar
  30. 30.
    Y. Cui, Z.H. Zhong, D.L. Wang, W.U. Wang, C.M. Lieber, Nano Lett. 3, 149 (2003)CrossRefGoogle Scholar
  31. 31.
    J.Y. Yu, S.W. Chung, J.R. Heath, J. Phys. Chem. B 104, 11864 (2000)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • D.E. Perea
    • 1
  • J.L. Lensch
    • 1
  • S.J. May
    • 1
  • B.W. Wessels
    • 1
    • 2
    • 3
  • L.J. Lauhon
    • 1
    • 2
  1. 1.Department of Materials Science and EngineeringNorthwestern UniversityEvanstonUSA
  2. 2.Materials Research CenterNorthwestern UniversityEvanstonUSA
  3. 3.Department of Electrical Engineering and Computer ScienceNorthwestern UniversityEvanstonUSA

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