Applied Physics A

, Volume 85, Issue 3, pp 247–253 | Cite as

Synthesis and optical properties of silicon nanowires grown by different methods

  • A. Colli
  • S. Hofmann
  • A. Fasoli
  • A.C. Ferrari
  • C. Ducati
  • R.E. Dunin-Borkowski
  • J. Robertson


We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 °C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed.


Chemical Vapour Deposition Vapour Transport Electron Energy Loss Spectroscopy Silicon Nanowires Chemical Vapour Deposition Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • A. Colli
    • 1
  • S. Hofmann
    • 1
  • A. Fasoli
    • 1
  • A.C. Ferrari
    • 1
  • C. Ducati
    • 2
  • R.E. Dunin-Borkowski
    • 2
  • J. Robertson
    • 1
  1. 1.Department of EngineeringUniversity of CambridgeCambridgeUK
  2. 2.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK

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