Applied Physics A

, Volume 84, Issue 4, pp 369–371 | Cite as

Etching nano-holes in silicon carbide using catalytic platinum nano-particles

  • E. Moyen
  • W. Wulfhekel
  • W. Lee
  • A. Leycuras
  • K. Nielsch
  • U. Gösele
  • M. Hanbücken
Rapid communication

Abstract

The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

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References

  1. 1.
    S. Matthias, F. Müller, Nature 424, 53 (2003)CrossRefADSGoogle Scholar
  2. 2.
    A. Sagar, C.D. Lee, R.M. Feenstra, C.K. Inoki, T.S. Kuan, J. Appl. Phys. 92, 4070 (2002)CrossRefADSGoogle Scholar
  3. 3.
    Y. Shishkin, Y. Ke, R.P. Devaty, W.J. Choyke, J. Appl. Phys. 97, 044908 (2005)CrossRefADSGoogle Scholar
  4. 4.
    Y. Shishkin, W.J. Choke, R.P. Devaty, J. Appl. Phys. 96, 2311 (2004)CrossRefADSGoogle Scholar
  5. 5.
    M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho, V. Dmitriev, Appl. Phys. Lett. 76, 1113 (2000)CrossRefADSGoogle Scholar
  6. 6.
    M.M. Faktor, D.G. Fiddyment, M.R. Taylor, J. Electrochem. Soc. 122, 1566 (1975)CrossRefGoogle Scholar
  7. 7.
    P. Schmuki, D.J. Lockwood, H.J. Labbe, J.W. Fraser, Appl. Phys. Lett. 69, 1620 (1996)CrossRefADSGoogle Scholar
  8. 8.
    G. Oskam, A. Natarajan, P.C. Searson, F.M. Ross, Appl. Surf. Sci. 119, 160 (1997)CrossRefADSGoogle Scholar
  9. 9.
    K. Somogyi, Phys. Stat. Solidi A 195, 67 (2003)CrossRefADSGoogle Scholar
  10. 10.
    S. Matthias, F. Müller, C. Jamois, R.B. Wehrspohn, U. Gösele, Adv. Mater. 16, 2166 (2004)CrossRefGoogle Scholar
  11. 11.
    V. Lehmann, H. Föll, J. Electrochem. Soc. 137, 653 (1990)CrossRefGoogle Scholar
  12. 12.
    V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993)CrossRefGoogle Scholar
  13. 13.
    K. Nielsch, J. Choi, K. Schwirn, R.B. Wehrspohn, U. Gösele, Nano Lett. 2, 677 (2002)CrossRefGoogle Scholar
  14. 14.
    J. Choi, K. Nielsch, M. Reiche, R.B. Wehrspohn, U. Gösele, J. Vac. Sci. Technol. B 21, 763 (2003)CrossRefGoogle Scholar
  15. 15.
    W. Wulfhekel, D. Sander, S. Nitsche, A. Leycuras, M. Hanbücken, Appl. Phys. A 79, 411 (2004)CrossRefADSGoogle Scholar
  16. 16.
    D. Sander, W. Wulfhekel, M. Hanbücken, S. Nitsche, J.P. Palmari, F. Dulot, F. Arnaud d’Avitaya, A. Leycuras, Appl. Phys. Lett. 81, 3570 (2002)CrossRefADSGoogle Scholar
  17. 17.
    W. Lee, E. Moyen, W. Wulfhekel, A. Leycuras, K. Nielsch, U. Gösele, M. Hanbücken, Appl. Phys. A 83, 361 (2006)CrossRefADSGoogle Scholar
  18. 18.
    J.L. Weyher, S. Lazar, J. Borysiuk, J. Pernot, Phys. Stat. Solidi 200, 578 (2005)ADSGoogle Scholar
  19. 19.
    C. Hallin, F. Owman, P. Martensson, A. Ellison, A. Konstantinov, O. Kordina, E. Janzen, J. Cryst. Growth 181, 241 (1997)CrossRefADSGoogle Scholar
  20. 20.
    N. Ohtani, M. Katsuno, T. Aigo, T. Fujimoto, H. Tsuge, H. Yashiro, M. Kanaya, J. Cryst. Growth 210, 613 (2000)CrossRefADSGoogle Scholar
  21. 21.
    K. Tsujino, M. Matsumura, Adv. Mater. 17, 1045 (2005)CrossRefGoogle Scholar
  22. 22.
    SiCrystal AG, Erlangen, Germany, www.sicrystal.deGoogle Scholar
  23. 23.
    A. Leycuras, Mater. Sci. Forum 338342, 241 (2000)CrossRefGoogle Scholar
  24. 24.
    W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbücken, Surf. Sci. 550, 8 (2004)CrossRefADSGoogle Scholar
  25. 25.
    W. Lee, M. Alexe, K. Nielsch, U. Gösele, Chem. Mater. 17, 3325 (2005)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • E. Moyen
    • 1
  • W. Wulfhekel
    • 2
  • W. Lee
    • 2
  • A. Leycuras
    • 3
  • K. Nielsch
    • 2
  • U. Gösele
    • 2
  • M. Hanbücken
    • 1
  1. 1.Campus de LuminyCRMCN-CNRSMarseilleFrance
  2. 2.Max-Planck-Institute of Microstructure PhysicsHalleGermany
  3. 3.CRHEA-CNRSValbonneFrance

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