Applied Physics A

, Volume 84, Issue 3, pp 345–349

Structural and photoluminescence characteristics of ZnO films by room temperature sputtering and rapid thermal annealing process

  • P.-T. Hsieh
  • Y.-C. Chen
  • C.-M. Wang
  • Y.-Z. Tsai
  • C.-C. Hu
Article

Abstract

ZnO thin films deposited on SiO2/Si substrates at room temperature by sputtering technology were annealed with a rapid thermal annealing process at various temperatures from 200 °C to 900 °C. The physical and optical properties of the ZnO films were investigated by X-ray diffraction, scanning electron microscopy and room-temperature photoluminescence (PL). The surface structures of the thin films showed great variations with increased annealing temperature. The PL spectrum illustrated that a stronger UV emission intensity appeared at an annealing temperature of 500 °C. On the other hand, visible-light emission could be obtained when the ZnO films were annealed above 500 °C and reached a maximum intensity at 900 °C. The possible mechanisms for visible-light emission are discussed.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Q.P. Wang, D.H. Zhang, Z.Y. Xue, X.J. Zhang, Opt. Mater. 26, 23 (2004)CrossRefADSGoogle Scholar
  2. 2.
    R. Hong, H. Qi, J.B. Huang, H.B. He, Z.X. Fan, J. Shao, Thin Solid Films 473, 58 (2005)CrossRefADSGoogle Scholar
  3. 3.
    J. Lim, K. Shin, H.W. Kim, C. Lee, J. Luminesc. 109, 181 (2004)Google Scholar
  4. 4.
    S.J. Martin, S.S. Schwartz, R.L. Gunshor, R.F. Pieret, J. Appl. Phys. 54, 561 (1983)CrossRefADSGoogle Scholar
  5. 5.
    D. Song, A.G. Aberle, J. Xia, Appl. Surf. Sci. 195, 291 (2002)CrossRefADSGoogle Scholar
  6. 6.
    M.A. Martinez, J. Herrero, M.T. Gutierrez, Solar Energ. Mater. Solar Cells 45, 75 (1997)CrossRefGoogle Scholar
  7. 7.
    J. Wang, G. Du, Y. Zhang, B. Zhao, Z. Yang, D. Liu, J. Cryst. Growth 263, 269 (2004)CrossRefADSGoogle Scholar
  8. 8.
    H.S. Kang, J.S. Kang, J.W. Kim, S.Y. Lee, J. Appl. Phys. 95, 1246 (2004)CrossRefADSGoogle Scholar
  9. 9.
    S. Bethke, H. Pan, B.W. Wessels, Appl. Phys. Lett. 52, 138 (1998)CrossRefADSGoogle Scholar
  10. 10.
    T. Minami, H. Nanto, S. Takata, Thin Solid Films 109, 379 (1983)CrossRefADSGoogle Scholar
  11. 11.
    B.J. Pierce, R.L. Hengehold, J. Appl. Phys. 47, 644 (1976)CrossRefADSGoogle Scholar
  12. 12.
    R. Dingle, Phys. Rev. Lett. 23, 579 (1969)CrossRefADSGoogle Scholar
  13. 13.
    P. Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Solid State Commun. 103, 459 (1997)CrossRefADSGoogle Scholar
  14. 14.
    S. Cho, J. Ma, Y. Kim, Y. Sun, G.K.L. Wong, J.B. Ketterson, Appl. Phys. Lett. 75, 2761 (1999)CrossRefADSGoogle Scholar
  15. 15.
    V. Srikant, D.R. Clarke, J. Appl. Phys. 83, 5447 (1998)CrossRefADSGoogle Scholar
  16. 16.
    P.H. Kasai, Phys. Rev. 130, 989 (1963)CrossRefADSGoogle Scholar
  17. 17.
    F.A. Kröger, H.J. Vink, J. Chem. Phys. 22, 250 (1954)CrossRefADSGoogle Scholar
  18. 18.
    M. Liu, A.H. Kitai, P. Mascher, J. Luminesc. 54, 35 (1992)CrossRefGoogle Scholar
  19. 19.
    E.G. Bylander, J. Appl. Phys. 49, 1188 (1978)CrossRefADSGoogle Scholar
  20. 20.
    J. Zhao, L.H. Hu, Z.Y. Wang, Y. Zhao, X.P. Liang, M.T. Wang, Appl. Surf. Sci. 229, 311 (2004)CrossRefADSGoogle Scholar
  21. 21.
    S.J. Chen, Y.C. Liu, J.G. Ma, D.X. Zhao, Z.Z. Zhi, Y.M. Lu, J.Y. Zhang, D.Z. Shen, X.W. Fan, J. Cryst. Growth 240, 467 (2002)CrossRefADSGoogle Scholar
  22. 22.
    R.K. Gupta, N. Shridhar, M. Katiyar, Mater. Sci. Semicond. Process. 5, 11 (2002)CrossRefGoogle Scholar
  23. 23.
    Y.G. Wang, S.P. Lau, H.W. Lee, S.F. Yu, B.K. Tay, J. Appl. Phys. 94, 354 (2003)CrossRefADSGoogle Scholar
  24. 24.
    N. Fujimura, T. Nishahara, S. Goto, J. Xu, T. Ito, J. Cryst. Growth 130, 269 (1993)CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • P.-T. Hsieh
    • 1
  • Y.-C. Chen
    • 1
  • C.-M. Wang
    • 2
  • Y.-Z. Tsai
    • 3
  • C.-C. Hu
    • 1
  1. 1.Department of Electrical EngineeringNational Sun Yat-Sen UniversityKaohsiungP.R. China
  2. 2.Department of Electrical EngineeringCheng Shiu UniversityKaohsiungP.R. China
  3. 3.Department of Electronic EngineeringCheng Shiu UniversityKaohsiungP.R. China

Personalised recommendations