Stacked chalcogenide layers used as multi-state storage medium for phase change memory
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- Lai, Y., Feng, J., Qiao, B. et al. Appl. Phys. A (2006) 84: 21. doi:10.1007/s00339-006-3571-7
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The multi-state storage capability of phase-change memory (PCM) was confirmed by using stacked chalcogenide layers as storage medium. The stacked films were prepared by stacking a pure Ge2Sb2Te5 (GST) layer, a tungsten layer and a silicon-doped GST layer. The electrical properties of the stacked films were also investigated. The results show that there are two negative differential resistance areas in the current-voltage (I–V) curve and three steps with three relatively stable resistance values in the resistance-voltage (R–V) curve, which indicate that the multi-state storage of PCM can be realized by using this stacked film structure. Qualitative analysis reveals that the multi-state storage capability of this stacked film structure is due to the successive crystallizations in a silicon-doped GST layer and a pure GST layer.