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Study of the bending modulus of individual silicon nitride nanobelts via atomic force microscopy

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Abstract

Analysis of the bending modulus of individual silicon nitride nanobelts in elastic regime is reported here. The nanobelts have the size between 200∼800 nm in width, and thickness 20∼50 nm. Atomic force microscopy was used to image and to perform measurements of force versus bending displacement on individual nanobelts suspending over strips. The bending modulus Eb is deduced by comparison of the measured force curves on the substrate and on the suspending nanobelts. It is shown that the elastic modulus of the silicon nitride nanobelts is about 570 GPa, which is much larger than that of bulk and film of the silicon nitride material. The larger elastic modulus is ascribed to the fact there are less structural defects in the silicon nitride nanobelts.

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Authors and Affiliations

  1. School of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing, 100871, P.R. China

    G.Y. Jing, H. Ji, W.Y. Yang, J. Xu & D.P. Yu

  2. State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, P.R. China

    G.Y. Jing, H. Ji, W.Y. Yang, J. Xu & D.P. Yu

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  1. G.Y. Jing
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  2. H. Ji
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  3. W.Y. Yang
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  4. J. Xu
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  5. D.P. Yu
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Correspondence to D.P. Yu.

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PACS

81.70.Bt; 81.40.Lm; 61.80.+g

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Jing, G., Ji, H., Yang, W. et al. Study of the bending modulus of individual silicon nitride nanobelts via atomic force microscopy. Appl. Phys. A 82, 475–478 (2006). https://doi.org/10.1007/s00339-005-3335-9

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  • DOI: https://doi.org/10.1007/s00339-005-3335-9

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