Applied Physics A

, Volume 81, Issue 4, pp 847–850

Enhancement of laser ablation yield by two color excitation

Article

Abstract

We present ablation results of silicon obtained by simultaneous irradiation of the sample with the fundamental beam of a picosecond-neodymium-vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small amount of second harmonic (SH) produced in a thin nonlinear crystal. In this fashion, the ablation yield could be increased by 70%. In addition, the ablation quality was improved in terms of surface smoothness. The underlying mechanism can be attributed to a ‘seeding’ of the target area with free carriers by the 532 nm radiation.

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Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.Photonics InstituteVienna University of TechnologyViennaAustria
  2. 2.Research Centre for MicrotechnologiesVorarlberg University of Applied SciencesDornbirnAustria

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