Applied Physics A

, Volume 81, Issue 3, pp 481–486

Nanostructure fabrication by glancing angle ion beam assisted deposition of silicon


DOI: 10.1007/s00339-005-3270-9

Cite this article as:
Schubert, E., Höche, T., Frost, F. et al. Appl. Phys. A (2005) 81: 481. doi:10.1007/s00339-005-3270-9


Glancing angle deposition by utilizing an ion beam sputter process and a controlled substrate rotation is used to deposit silicon nanostructures with different structure varieties. The structures are grown on seeded and plain [100] silicon substrates at room temperature. The ratio of deposition rate to substrate angular frequency and the substrate surface properties determine the nanostructure geometry, size and assembly.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • E. Schubert
    • 1
  • T. Höche
    • 1
  • F. Frost
    • 1
  • B. Rauschenbach
    • 1
  1. 1.Leibniz-Institut für Oberflächenmodifizierung e.V.LeipzigGermany

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