Advertisement

Applied Physics A

, Volume 81, Issue 5, pp 975–980 | Cite as

Thickness dependent formation and properties of GdSi2/Si(100) interfaces

  • G. PetõEmail author
  • G. Molnár
  • L. Dózsa
  • Z.E. Horváth
  • Zs.J. Horváth
  • E. Zsoldos
  • C.A. Dimitriadis
  • L. Papadimitriou
Article

Abstract

Epitaxial and polycrystalline orthorhombic GdSi2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film . The most important property of these GdSi2/Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance–voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 1010 cm-2), while the non-epitaxial growth induced defects of a much higher density (about 1012 cm-2). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi2/Si interface.

Keywords

Barrier Height Orientation Relationship Schottky Barrier Schottky Diode Deep Level Transient Spectroscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L.J. Brillson: Surf. Sci. Rep. 2, 123 (1982)ADSCrossRefGoogle Scholar
  2. 2.
    R.T. Tung: Phys. Rev. Lett. 52, 461 (1984)ADSMathSciNetCrossRefGoogle Scholar
  3. 3.
    R.T. Tung, J.M. Gibson: J. Vac Sci.Techn. A3, 987 (1985)Google Scholar
  4. 4.
    K. Hricovini, G. Le Lay, A. Khan, A. Taleb-Ibrahimi, J.E. Bonnet, L. Lassabatere, M. Dumas: Surf. Sci. 251/252, 424 (1991)Google Scholar
  5. 5.
    I. Gerõcs, G. Molnár, E. Jároli, E. Zsoldos, G. Petõ, J. Gyulai, E. Bugiel: Appl. Phys. Lett. 51, 2144 (1987)ADSCrossRefGoogle Scholar
  6. 6.
    A. Barna, G. Radnóczi, B. Pécz: In Handbook of Microscopy, ed. by S. Amelinckx, D. van Dick, J. van Landuyt, G. van Tendeloo (VCH Verlagsgeselschaft GmbH Weinheim, 1997) Vol. 3, p. 751Google Scholar
  7. 7.
    Zs.J. Horváth: J. Appl. Phys. 63, 976 (1988)ADSCrossRefGoogle Scholar
  8. 8.
    Zs.J. Horváth: Vacuum 41, 804 (1990)CrossRefGoogle Scholar
  9. 9.
    JCPDS files, ICDD (1992)Google Scholar
  10. 10.
    Gy. Molnár, G. Petõ, E. Zsoldos, Z.E. Horváth, N.Q. Khánh: Appl. Surf. Sci. 102, 159 (1996)ADSCrossRefGoogle Scholar
  11. 11.
    Zs.J. Horváth, G. Molnár, B. Kovács, G. Petõ, M. Andrási, B. Szentpáli: J. Crystal Growth 126, 163 (1993)ADSCrossRefGoogle Scholar
  12. 12.
    H.C. Card, E.H. Rhoderick: J. Phys. D 4, 1589 (1971)ADSCrossRefGoogle Scholar
  13. 13.
    R.D. Thompson, K.N. Tu: Thin Solid Films 93, 265 (1982)ADSCrossRefGoogle Scholar
  14. 14.
    J.A. Knapp, S.T. Picraux, C.S. Wu, S.S. Lau: J. Appl. Phys. 58, 3747 (1985)ADSCrossRefGoogle Scholar
  15. 15.
    G. Molnár, G. Petõ, E. Kótai, E. Zsoldos, J. Gyulai, L. Guczi: Surf. Interface Anal. 19, 469 (1992)CrossRefGoogle Scholar
  16. 16.
    D. Caplan, M.J. Graham, M. Cohen: J. Electrochem. Soc. 19, 1205 (1972)CrossRefGoogle Scholar
  17. 17.
    S.C. Jain, H.E. Maes, K. Pinardi, I. De Wolf: J. Appl. Phys. 79, 8145 (1996)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • G. Petõ
    • 1
    Email author
  • G. Molnár
    • 1
  • L. Dózsa
    • 1
  • Z.E. Horváth
    • 1
  • Zs.J. Horváth
    • 1
  • E. Zsoldos
    • 1
  • C.A. Dimitriadis
    • 2
  • L. Papadimitriou
    • 2
  1. 1.Research Institute for Technical Physics and Materials ScienceBudapestHungary
  2. 2.Department of PhysicsUniversity of ThessalonikiThessalonikiGreece

Personalised recommendations