One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography
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- Wu, W., Jung, GY., Olynick, D. et al. Appl. Phys. A (2005) 80: 1173. doi:10.1007/s00339-004-3176-y
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We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.
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