Applied Physics A

, Volume 80, Issue 6, pp 1173–1178 | Cite as

One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

  • W. Wu
  • G.-Y. Jung
  • D.L. Olynick
  • J. Straznicky
  • Z. Li
  • X. Li
  • D.A.A. Ohlberg
  • Y. Chen
  • S.-Y. Wang
  • J.A. Liddle
  • W.M. Tong
  • R. Stanley Williams
Article

Abstract

We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.

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Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • W. Wu
    • 1
  • G.-Y. Jung
    • 1
  • D.L. Olynick
    • 2
  • J. Straznicky
    • 1
  • Z. Li
    • 1
  • X. Li
    • 1
  • D.A.A. Ohlberg
    • 1
  • Y. Chen
    • 3
  • S.-Y. Wang
    • 1
  • J.A. Liddle
    • 2
  • W.M. Tong
    • 1
    • 4
  • R. Stanley Williams
    • 1
  1. 1.Quantum Science Research, HP LabsHewlett-Packard CompanyPalo AltoUSA
  2. 2.Lawrence Berkeley National LabBerkeleyUSA
  3. 3.School of Engineering and Applied ScienceUniversity of CaliforniaLos AngelesUSA
  4. 4.Technology Development Operations, InkJet Printing GroupHewlett-Packard CompanyCorvallisUSA

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