Applied Physics A

, Volume 80, Issue 6, pp 1173–1178

One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography

  • W. Wu
  • G.-Y. Jung
  • D.L. Olynick
  • J. Straznicky
  • Z. Li
  • X. Li
  • D.A.A. Ohlberg
  • Y. Chen
  • S.-Y. Wang
  • J.A. Liddle
  • W.M. Tong
  • R. Stanley Williams
Article

DOI: 10.1007/s00339-004-3176-y

Cite this article as:
Wu, W., Jung, GY., Olynick, D. et al. Appl. Phys. A (2005) 80: 1173. doi:10.1007/s00339-004-3176-y

Abstract

We have developed a process to fabricate a cross-bar structure using UV-curable nanoimprint lithography with a UV-curable double-layer spin-on resist, metal lift off and Langmuir–Blodgett film deposition. This process allowed us to produce 1-kbit cross-bar memory circuits at 30-nm half-pitch on both top and bottom electrodes. Read, write, erase and cross talking were also investigated.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • W. Wu
    • 1
  • G.-Y. Jung
    • 1
  • D.L. Olynick
    • 2
  • J. Straznicky
    • 1
  • Z. Li
    • 1
  • X. Li
    • 1
  • D.A.A. Ohlberg
    • 1
  • Y. Chen
    • 3
  • S.-Y. Wang
    • 1
  • J.A. Liddle
    • 2
  • W.M. Tong
    • 1
    • 4
  • R. Stanley Williams
    • 1
  1. 1.Quantum Science Research, HP LabsHewlett-Packard CompanyPalo AltoUSA
  2. 2.Lawrence Berkeley National LabBerkeleyUSA
  3. 3.School of Engineering and Applied ScienceUniversity of CaliforniaLos AngelesUSA
  4. 4.Technology Development Operations, InkJet Printing GroupHewlett-Packard CompanyCorvallisUSA

Personalised recommendations