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Applied Physics A

, Volume 81, Issue 4, pp 759–762 | Cite as

Correlation between green luminescence and morphology evolution of ZnO films

  • J.D. Ye
  • S.L. Gu
  • F. Qin
  • S.M. Zhu
  • S.M. Liu
  • X. Zhou
  • W. Liu
  • L.Q. Hu
  • R. Zhang
  • Y. Shi
  • Y.D. Zheng
Article

Abstract

Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with different grain structures has strong influence on the green photoluminescence of ZnO. When large discrete islands or structureless overgrowth cover the rough surface, broad green emissions around 500 nm go beyond the ultraviolet (UV) emission band; whereas, when the surface is packed closely with small grains, only weak green emission is observed with a red-shift to 528 nm. This variation of green emissions is ascribed to changes in the charge states of oxygen vacancies, which is strongly dependent on the surface morphology and grain structures. Based on the grain boundary defect model, two possible recombination processes for the green emission are proposed and discussed in detail.

Keywords

Atomic Force Microscopy Chemical Vapor Deposition Oxygen Vacancy Charge State Defect Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • J.D. Ye
    • 1
  • S.L. Gu
    • 1
  • F. Qin
    • 1
  • S.M. Zhu
    • 1
  • S.M. Liu
    • 1
  • X. Zhou
    • 1
  • W. Liu
    • 1
  • L.Q. Hu
    • 1
  • R. Zhang
    • 1
  • Y. Shi
    • 1
  • Y.D. Zheng
    • 1
  1. 1.Department of PhysicsNanjing UniversityNanjingP.R. China

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