Applied Physics A

, Volume 80, Issue 1, pp 73–76

Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

Article

DOI: 10.1007/s00339-004-2978-2

Cite this article as:
Chen, T., Li, X., Zhang, S. et al. Appl. Phys. A (2005) 80: 73. doi:10.1007/s00339-004-2978-2

Abstract

(200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species’ saturation.

Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  1. 1.State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of CeramicsChinese Academy of SciencesShanghaiChina
  2. 2.School of Mechanical and Production EngineeringNanyang Technological UniversitySingaporeSingapore

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