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Applied Physics A

, Volume 79, Issue 7, pp 1711–1714 | Cite as

Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates

  • B.P. ZhangEmail author
  • N.T. Binh
  • K. Wakatsuki
  • N. Usami
  • Y. Segawa
Rapid communication

Abstract

Single-crystalline ZnO tubes were grown on sapphire(0001) substrates by metalorganic chemical vapor deposition at 400 °C. The growth temperature was much lower than that (900–1100 °C) used in previous reports. The tubes were grown along the substrate normal and were characterized by hexagon-shaped cross sections. All of the tubes possessed the same epitaxial relationships with respect to the substrate. Growth pressure was found to play an important role in the formation of ZnO tubes.

Keywords

Sapphire Chemical Vapor Deposition Vapor Deposition Chemical Vapor Growth Temperature 

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References

  1. 1.
    C. Weisbuch, H. Benisty, R.J. Houdré: J. Luminesc. 85, 271 (2000)ADSCrossRefGoogle Scholar
  2. 2.
    Y. Arakawa, H. Sakaki: Appl. Phys. Lett. 40, 939 (1970)ADSCrossRefGoogle Scholar
  3. 3.
    T. Bukowski, J.H. Simmons: Crit. Rev. Solid State Mater. Sci. 27, 119 (2002)ADSCrossRefGoogle Scholar
  4. 4.
    S. Muthukumar, H. Sheng, J. Zhong, Z. Zhang, N.W. Emanetoglu, Y. Lu: IEEE Trans. Nanotechnol. 2, 50 (2003)ADSCrossRefGoogle Scholar
  5. 5.
    D.C. Look: Mater. Sci. Eng. B 80, 383 (2001)CrossRefGoogle Scholar
  6. 6.
    M. Kawasaki, A. Ohtomo, I. Ohkubo, H. Koinuma, Z.K. Tang, P. Yu, G.K.L. Wong, B.P. Zhang, Y. Segawa: Mater. Sci. Eng. B 56, 239 (1998)CrossRefGoogle Scholar
  7. 7.
    H.D. Sun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma: Appl. Phys. Lett. 91, 1993 (2002)Google Scholar
  8. 8.
    K. Keis, E. Magnusson, H. Lindström, S.E. Lindquist, A. Hagfeldt: Sol. Energy Mater. Sol. Cells 73, 51 (2002)CrossRefGoogle Scholar
  9. 9.
    Y. Hu, X. Zhou, Q. Han, Q. Cao, Y. Huang: Mater. Sci. Eng. B 99, 41 (2003)CrossRefGoogle Scholar
  10. 10.
    M.H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang: Science 292, 1897 (2001)ADSCrossRefGoogle Scholar
  11. 11.
    S.C. Lyu, Y. Zhang, H. Ruh, H.J. Lee, H.W. Shim, E.K. Suh, C.J. Lee: Chem. Phys. Lett. 363, 134 (2002)ADSCrossRefGoogle Scholar
  12. 12.
    J.J. Wu, S.C. Liu: Adv. Mater. 14, 215 (2002)CrossRefGoogle Scholar
  13. 13.
    B.P. Zhang, N.T. Binh, Y. Segawa, K. Wakatsuki, N. Usami: Appl. Phys. Lett. 83, 1635 (2003)ADSCrossRefGoogle Scholar
  14. 14.
    W.I. Park, Y.H. Jun, S.W. Jung, G. Yi: Appl. Phys. Lett. 82, 964 (2003)ADSCrossRefGoogle Scholar
  15. 15.
    B.D. Yao, Y.F. Chan, N. Wang: Appl. Phys. Lett. 81, 757 (2002)ADSCrossRefGoogle Scholar
  16. 16.
    Z.W. Pan, Z.R. Dai, Z.L. Wang: Science 291, 1947 (2001)ADSCrossRefGoogle Scholar
  17. 17.
    J.Y. Lao, J.Y. Huang, D.Z. Wang, Z.F. Ren: Nano Lett. 3, 235 (2003)ADSCrossRefGoogle Scholar
  18. 18.
    H.T. Ng, J. Li, M.K. Smith, P. Nguyen, A. Cassell, J. Han, M. Meyyappan: Science 300, 1249 (2003)CrossRefGoogle Scholar
  19. 19.
    J.Q. Hu, Y. Bando: Appl. Phys. Lett. 82, 1401 (2003)ADSCrossRefGoogle Scholar
  20. 20.
    X.W. Sun, S.F. Yu, C.X. Xu, C. Yuen, B.J. Chen, S. Li: Jpn. J. Appl. Phys. 42, L1229 (2003)ADSCrossRefGoogle Scholar
  21. 21.
    J. Zhang, L. Sun, C. Liao, C. Yan: Chem. Commun. 262 (2002)Google Scholar
  22. 22.
    I.V. Markov: Crystal Growth for Beginners, Fundamentals of Nucleation, Crystal Growth Epitaxy (World Scientific, Singapore 1996) p. 13Google Scholar

Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • B.P. Zhang
    • 1
    • 2
    Email author
  • N.T. Binh
    • 1
    • 3
  • K. Wakatsuki
    • 1
    • 2
  • N. Usami
    • 4
  • Y. Segawa
    • 1
    • 2
  1. 1.Photodynamics Research CenterThe Institute of Physical and Chemical Research (RIKEN)SendaiJapan
  2. 2.Department of Physics, Graduate School of ScienceTohoku UniversitySendaiJapan
  3. 3.Laboratory for Laser Spectroscopy, Center for Quantum ElectronicsInstitute of Physics – NCSTVietnam
  4. 4.Institute for Materials ResearchTohoku UniversitySendaiJapan

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