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Applied Physics A

, Volume 80, Issue 2, pp 271–273 | Cite as

Ferroelectric characteristics of silicate-bound Bi4Ti3O12 thin films

  • K. Kato
  • K. Suzuki
  • K. Tanaka
  • D. Fu
  • K. Nishizawa
  • T. Miki
  • H. Ishiwara
Article

Abstract

40-nm-thick Bi4Ti3O12 films have been deposited by spin coating with a hybrid precursor solution of bismuth-2-ethylhexanoate, titanium tetraisopropoxide and tetraethysilicate. The 500 °C-annealed thin film consists of Bi4Ti3O12 grains bound by ultra-thin amorphous silicate layers. The film shows a high degree of crystallinity with random orientation and exhibits a structure-dependent propeller-like P–V hysteresis loop. The ultra-thin layer of amorphous silicate is found to have multiple functions of binder, compositional buffer and insulator, which results in an improvement of the electrical properties of the Bi4Ti3O12-Bi2O3×SiO2 thin films.

Keywords

Titanium Thin Film SiO2 Electrical Property Hysteresis Loop 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 2003

Authors and Affiliations

  • K. Kato
    • 1
    • 2
  • K. Suzuki
    • 1
  • K. Tanaka
    • 1
  • D. Fu
    • 1
  • K. Nishizawa
    • 1
  • T. Miki
    • 1
  • H. Ishiwara
    • 2
  1. 1.National Institute of Advanced Industrial Science and TechnologyNagoyaJapan
  2. 2.Frontier Collaborative Research CenterTokyo Institute of TechnologyYokohamaJapan

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