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Applied Physics A

, Volume 78, Issue 4, pp 435–440 | Cite as

Nonlinear terahertz spectroscopy of semiconductor nanostructures

  • C. Luo
  • K. Reimann
  • M. Woerner
  • T. Elsaesser
Article

Abstract

Nonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse.

Keywords

Spectroscopy Frequency Conversion Nonlinear Frequency Rabi Oscillation Semiconductor Nanostructures 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  1. 1.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan
  2. 2.Max-Born-Institut für Nichtlineare Optik und KurzzeitspektroskopieBerlinGermany

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